Laptop Memory

(9)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: Lightning Bolt design element Born for gaming High quality IC with stable performance Trustworthy compatibility
• Model #: TTZD416G3200HC22DC-S
• Item #: N82E16820331672
• Return Policy: International Order Return Policy

(91)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED432G3200C22DC-S01
• Item #: N82E16820331504
• Return Policy: International Order Return Policy

(2)

• CAS Latency: 19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED48G2666C19-S01
• Item #: N82E16820331254
• Return Policy: International Order Return Policy

(9)

• CAS Latency: 19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED432G2666C19DC-S01
• Item #: N82E16820331602
• Return Policy: International Order Return Policy

(16)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED432G3200C22-S01
• Item #: N82E16820331502
• Return Policy: International Order Return Policy

(9)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED416G3200C22DC-S01
• Item #: N82E16820331503
• Return Policy: International Order Return Policy

(14)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED416G3200C22-S01
• Item #: N82E16820331501
• Return Policy: International Order Return Policy

(4)

• CAS Latency: 19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED416G2666C19DC-S01
• Item #: N82E16820331256
• Return Policy: International Order Return Policy

• CAS Latency: 19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED416G2666C19-S01
• Item #: N82E16820331484
• Return Policy: International Order Return Policy

• CAS Latency: 40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Features: Faster than ever with 4800MHz frequency. New structural composition for better performance. Conserve energy with energy-efficient 1.1V working voltage. Supports on-die ECC for more stable systems. Upgraded capacity for powerful multitasking.
• Model #: TED532G4800C40DC-S01
• Item #: N82E16820331808
• Return Policy: International Order Return Policy

(1)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: Timeless classic with eye-catching features 10 layer-board with professional anti-interference design Customized high-temperature resistant capacitor Multitasking for better efficiency
• Model #: TTCCD432G3200HC22DC-
• Item #: N82E16820331686
• Return Policy: International Order Return Policy

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: Timeless classic with eye-catching features 10 layer-board with professional anti-interference design Customized high-temperature resistant capacitor Multitasking for better efficiency
• Model #: TTCCD464G3200HC22DC-
• Item #: N82E16820331687
• Return Policy: International Order Return Policy

• CAS Latency: 40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Features: Faster than ever with 4800MHz frequency. New structural composition for better performance. Conserve energy with energy-efficient 1.1V working voltage. Supports on-die ECC for more stable systems. Upgraded capacity for powerful multitasking.
• Model #: TED532G4800C40-S01
• Item #: N82E16820331809
• Return Policy: International Order Return Policy

• CAS Latency: 40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Features: Faster than ever with 4800MHz frequency. New structural composition for better performance. Conserve energy with energy-efficient 1.1V working voltage. Supports on-die ECC for more stable systems. Upgraded capacity for powerful multitasking.
• Model #: TED516G4800C40DC-S016
• Item #: N82E16820331807
• Return Policy: International Order Return Policy

• CAS Latency: 19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Features: Timeless classic with eye-catching features 10 layer-board with professional anti-interference design Customized high-temperature resistant capacitor Multitasking for better efficiency
• Model #: TTCCD432G2666HC19DC-S01
• Item #: N82E16820331796
• Return Policy: International Order Return Policy

• CAS Latency: 40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: TED516G4800C40-S01
• Item #: N82E16820331938
• Return Policy: International Order Return Policy

(8)

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED48G3200C22-S01
• Item #: 9SIAD6HHXT4401
• Return Policy: View Return Policy

• Model #: TED564G4800C40DC-S01
• Item #: N82E16820331937
• Return Policy: International Order Return Policy

• CAS Latency: 40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Features: Faster than ever with 4800MHz frequency. New structural composition for better performance. Conserve energy with energy-efficient 1.1V working voltage. Supports on-die ECC for more stable systems. Upgraded capacity for powerful multitasking.
• Model #: TED58G4800C40-S016
• Item #: N82E16820331939
• Return Policy: International Order Return Policy

(14)

OUT OF STOCK

• CAS Latency: 22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED464G3200C22DC-S01
• Item #: N82E16820331505
• Return Policy: International Order Return Policy