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Brand | SAMSUNG |
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Series | 9100 PRO |
Model | MZ-VAP1T0B/AM |
Part Number | MZ- VAP1T0B/AM |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
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Capacity | 1TB |
Memory Components | Samsung V NAND TLC (V8) |
Interface | PCI-Express 5.0 x4 |
Protocol | NVMe 2.0 |
Controller | In-House Controller |
Cache | 1GB LPDDR4X Intelligent TurboWrite 2.0: 242GB |
Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
Max Sequential Read | Up to 14700 MBps |
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Max Sequential Write | Up to 13300 MBps |
4KB Random Read | Up to 1,850,000 IOPS |
4KB Random Write | Up to 2,600,000 IOPS |
Terabytes Written (TBW) | 600TB |
HeatSink | without HeatSink |
Power Consumption (Idle) | 4.0mW Device Sleep (L1.2) |
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Power Consumption (Active) | 7.6W / 7.2W (Read/Write) |
Height | 2.38mm |
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Width | 22.15mm |
Depth | 80.15mm |
Weight | 9g |
Date First Available | March 18, 2025 |
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Warranty Notice:
This product does not include manufacturer warranty when purchased or used outside of its designated sales region. By purchasing internationally, you acknowledge that warranty support from the manufacturer will not be available.