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Brand | SAMSUNG |
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Series | 9100 PRO |
Model | MZ-VAP4T0CW |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
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Capacity | 4TB |
Memory Components | Samsung V NAND TLC (V8) |
Interface | PCI-Express 5.0 x4 |
Protocol | NVMe 2.0 |
Controller | In-House Controller |
Cache | 4GB LPDDR4X Intelligent TurboWrite 2.0: 964GB |
Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
Max Sequential Read | Up to 14800 MBps |
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Max Sequential Write | Up to 13400 MBps |
4KB Random Read | Up to 2,200,000 IOPS |
4KB Random Write | Up to 2,600,000 IOPS |
Terabytes Written (TBW) | 2400TB |
HeatSink | with HeatSink |
Power Consumption (Idle) | 5.7mW Device Sleep (L1.2) |
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Power Consumption (Active) | 9.0W / 8.2W (Read/Write) |
Height | 8.88mm |
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Width | 25mm |
Depth | 80.15mm |
Weight | 28g |
Date First Available | April 16, 2025 |
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Warranty Notice:
This product does not include manufacturer warranty when purchased or used outside of its designated sales region. By purchasing internationally, you acknowledge that warranty support from the manufacturer will not be available.