Learn more about the SAMSUNG MZ-V6E1T0BW
ModelBrand | SAMSUNG |
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Series | 960 EVO |
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Model | MZ-V6E1T0BW |
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Device Type | Internal Solid State Drive (SSD) |
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Used For | Consumer |
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DetailsForm Factor | M.2 2280 |
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Capacity | 1TB |
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Memory Components | 3D NAND |
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Interface | PCI-Express 3.0 x4 |
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Controller | Samsung Polaris controller |
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Cache | 1024MB |
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PerformanceMax Sequential Read | Up to 3200 MBps |
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Max Sequential Write | Up to 1900 MBps |
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4KB Random Read | Up to 380,000 IOPS (4KB, QD32) Up to 14,000 IOPS (4KB, QD1) |
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4KB Random Write | Up to 360,000 IOPS (4KB, QD32) Up to 50,000 IOPS (4KB, QD1) |
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MTBF | 1,500,000 hours |
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FeaturesFeatures | TRIM Support: TRIM Supported
S.M.A.R.T Support: S.M.A.R.T Supported
GC (Garbage Collection): Auto Garbage Collection Algorithm
Encryption Support: AES 256-bit for User Data EncryptionTCG Opal Family Spec and eDrive (IEEE1667) to be supported by FW update
Device Sleep Mode Support: 5mW (L1.2) |
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EnvironmentalPower Consumption (Idle) | 1.2W |
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Power Consumption (Active) | 5.7W |
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Operating Temperature | 0°C ~ +70°C |
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Max Shock Resistance | 1500G, duration 0.5m sec, 3 axis |
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Dimensions & WeightHeight | 2.38mm |
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Width | 22.15mm |
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Depth | 80.15mm |
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Weight | 8.20g |
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Additional InformationDate First Available | May 23, 2019 |
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Customer Reviews of the SAMSUNG MZ-V6E1T0BW