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Learn more about the SAMSUNG MZ-V9S4T0B/AM
Model| Brand | SAMSUNG |
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| Series | 990 EVO Plus |
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| Model | MZ-V9S4T0B/AM |
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| Device Type | Internal Solid State Drive (SSD) |
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| Used For | Consumer |
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Details| Form Factor | M.2 2280 |
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| Capacity | 4TB |
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| Interface | PCI-Express 4.0 x4 / PCI-Express 5.0 x2 |
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| Protocol | NVMe 2.0 |
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| Encryption | Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667) |
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Performance| Max Sequential Read | Up to 7250 MBps |
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| Max Sequential Write | Up to 6300 MBps |
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| 4KB Random Read | Up to 1,050,000 IOPS |
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| 4KB Random Write | Up to 1,400,000 IOPS |
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| Terabytes Written (TBW) | 2400TB |
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Environmental| Power Consumption (Active) | 5.5W / 4.8W (Read / Write) |
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Additional Information| First Listed on Newegg | September 25, 2024 |
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Customer Reviews of the SAMSUNG MZ-V9S4T0B/AM
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