(1)

• Max Sequential Read: Up to 7000 MBps
• Max Sequential Write: Up to 6500 MBps
• Max Shock Resistance: 1500G/0.5ms
• Used For: Consumer
• Model #: SP01KGBP44US7505AC

(191)

• Max Sequential Read: Up to 460 MBps
• Max Sequential Write: Up to 360 MBps
• Connector: SATA
• Form Factor: 2.5-inch
• Model #: SU128GBSS3A55S25AH

(371)

• Max Sequential Read: Up to 2200 MBps
• Max Sequential Write: Up to 1600 MBps
• Max Shock Resistance: 1500G / 0.5 ms
• Used For: Consumer
• Model #: SP256GBP34A60M28

(76)

• Part Number: SU04KGBP44UD9005SN
• Used For: Consumer
• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4500 MBps
• Model #: SU04KGBP44UD9005SN

(76)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4800 MBps
• Max Shock Resistance: 1500g/0.5ms
• Part Number: SP02KGBP44UD9005
• Model #: SU02KGBP44UD9005SN

(27)

• Card type: MicroSD
• Speed Class Rating: UHS-I / U3 / V30 / A1
• Read Speed: Up to 80MB/s
• Write Speed: Up to 20MB/s
• Model #: S2128GBSTXDU3V20AD

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Chipset: Value Grade Samsung C die
• Model #: SP008GISFT320B00

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Unbuffered
• Model #: SP008GILFT320B00

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Chipset: Value Grade Samsung C die
• Model #: SP016GISFT320B00

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Registered
• Model #: SP016GIRFD320B00

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Unbuffered
• Model #: SP016GILFT320B00

(157)

• CAS Latency: CL16
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Model #: SP016GXLZU320BDA

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDL

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDF

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDE

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDJ

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDK

• Voltage: 1.2V
• Model #: SP008GBLFU240X02

• Voltage: 1.20V
• Model #: SP004GBLFU240C02

• Voltage: 1.20V
• Model #: SP004GBLFU213C02

• CAS Latency: CL11
• Voltage: 1.50V
• Timing: 11-11-11-28
• Buffered/Registered: Unbuffered
• Model #: SP008GBLTU160N02

• Model #: SP004GBLTU160N02.

• Model #: SP016GBLFU240X02

• Voltage: 1.50V
• Model #: SP008GBSTU160N02

(157)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Buffered/Registered: Unbuffered
• Model #: SP032GXLZU320FDA

(157)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Buffered/Registered: Unbuffered
• Model #: SP032GXLZU320BDAJ7

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SU032GXLWU60AFDFSK

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN

(14)

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SU032GXLWU60AFDESK

(35)

• CAS Latency: CL11
• Voltage: 1.35V
• Features: Highly Effective Energy Saving Running at 1.35 volts at 1600MHz, the DDR3 Low-Voltage series is able to decrease hardware power consumption effectively without compromising the benefit of the performance. The series also allows the notebook users to save energy up to 20% from the benefits of low energy consumption. Eco-friendly Power Saver Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations. Excellent Compatibility This series is compatible with the latest Intel Haswell platform, ideal for those who are looking for a greener and power-saving alternative while enjoying the ultimate system performance. Silicon Power's DDR3 Low-Voltage series i...
• Model #: SP008GLSTU160N02NE

(3)

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SP032GXLWU60AFDJ

• Brand: Silicon Power
• Model #: SP016GBSVU560F02

(157)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Buffered/Registered: Unbuffered
• Model #: SP016GXLZU320BDAJ5

• CAS Latency: 22
• Voltage: 1.2 volts
• Multi-channel Kit: 2
• Timing: 22
• Model #: SP016GBLFU320B22

(157)

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Buffered/Registered: Unbuffered
• Model #: SU016GXLZU360BDDSN