IRLML6344TRPBF SOT-23 NMOS MOS N-Channel Power MOSFET Transistor, Surface Mounted Device (Pack of 20pcs)

Product Description:This high-performance N-channel Power MOSFET is designed for applications requiring low on-resistance and high efficiency. Ideal for load/system switch operations, it features a low RDS(on) of less than 29m, contributing to lower conduction losses and improved thermal performance.

Key Features:

• Ultra-low RDS(on): < 29m at VGS = 4.5V
• Max Gate-to-Source Voltage (VGS Max): ±12V
• High Drain-to-Source Voltage (VDS): 30V
• Industry-standard SOT-23 Package for multi-vendor compatibility
• Environmentally friendly, RoHS compliant
• Increased Reliability with MSL1 qualification

Electric Characteristics (TJ = 25°C):

• Drain-to-Source Breakdown Voltage (V(BR)DSS): 30V
• Gate Threshold Voltage (VGS(th)): 0.5V typical
• Internal Gate Resistance (RG): 1.7
• Forward Transconductance (gfs): 19S
• Total Gate Charge (Qg): 6.8nC
• Turn-On Delay Time (td(on)): Typically 4.2ns
• Rise Time (tr): Typically 5.6ns
• Turn-Off Delay Time (td(off)): Typically 22ns
• Fall Time (t): Typically 9.1ns

Thermal Performance:

• Thermal Resistance Junction-to-Ambient (RJA): 100°C/W typical

Package Information:

• Micro3 (SOT-23) Tape and Reel packaging available in quantities of 3000

This MOSFET is the perfect choice for engineers seeking high performance and reliability in their power electronics designs. With its low on-resistance and fast switching times, it ensures efficient operation and long-term durability.