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W29N01HVSINA-10pcs
- Product description:
- W29N01HVSINA NAND Flash memory 12mm * 20mm
- The W29N01HVSINA (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA for CMOS standby current.
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Product description:
W29N01HVSINA NAND Flash memory 12mm * 20mm
The W29N01HVSINA (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA for CMOS standby current.
Features:
Density: 1Gbit (Single chip solution)
Vcc: 2.7V to 3.6V
Bus width: x8
Operating temperature: -40°C to 85°C
Single-Level Cell (SLC) technology
Density: 1G-bit/128M-byte
Page size: 2, 112 bytes (2048 + 64 bytes)
Block size: 64 pages (128K + 4K bytes)
Random read: 25us
Sequential read cycle: 25ns
Page program time: 250us(typ. )
Block erase time: 2ms(typ. )
Endurance 100, 000 Erase/Program Cycles (1)
10-years data retention
Package: 48-pin TSOP1
W29N01HVSINA NAND Flash memory 12mm * 20mm
The W29N01HVSINA (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA 10uA for CMOS standby current.
Features:
Density: 1Gbit (Single chip solution)
Vcc: 2.7V to 3.6V
Bus width: x8
Operating temperature: -40°C to 85°C
Single-Level Cell (SLC) technology
Density: 1G-bit/128M-byte
Page size: 2, 112 bytes (2048 + 64 bytes)
Block size: 64 pages (128K + 4K bytes)
Random read: 25us
Sequential read cycle: 25ns
Page program time: 250us(typ. )
Block erase time: 2ms(typ. )
Endurance 100, 000 Erase/Program Cycles (1)
10-years data retention
Package: 48-pin TSOP1
Warranty & Returns
Warranty, Returns, And Additional Information
Warranty
- Please contact the Seller directly for warranty information. Warranty information may also be found on the Manufacturer's website.
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Return Policies
- Return for refund within: 30 days
- Return for replacement within: 30 days
- This item is covered by Minerdoctor Return Policy
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