"smx3kr2uncx145"

• Model #: 2RGGRT6l

• Outlets: 9
• Battery Run Time: Full load runtime (minutes): 3.9 min. (2700w) Half load runtime (minutes): 11.1 min. (1350w)
• Output Frequency: 50 / 60Hz
• Battery Recharge Time: Less than 5 hours from 10 to 90%
• Model #: SMX3000XLRT2UA

(35)

• CAS Latency: CL11
• Voltage: 1.35V
• Features: Highly Effective Energy Saving Running at 1.35 volts at 1600MHz, the DDR3 Low-Voltage series is able to decrease hardware power consumption effectively without compromising the benefit of the performance. The series also allows the notebook users to save energy up to 20% from the benefits of low energy consumption. Eco-friendly Power Saver Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations. Excellent Compatibility This series is compatible with the latest Intel Haswell platform, ideal for those who are looking for a greener and power-saving alternative while enjoying the ultimate system performance. Silicon Power's DDR3 Low-Voltage series i...
• Model #: SP008GLSTU160N02NE

(3)

• 4KB Random Read: Up to 98,000 IOPS
• 4KB Random Write: Up to 29,000 IOPS
• Max Sequential Read: Up to 550 MBps
• Endurance: 1 DWPD
• Model #: MZ-7L348000

• Model #: M471A2K43BB1-CPB_Sam

• Endurance: 2.2 DWPD
• MTBF: 2,000,000 hours
• Operating Temperature: 0°C ~ +70°C
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Model #: SSDSC2KB038TZ01

(446)

• Max Sequential Read: Up to 3000 MBps
• Max Sequential Write: Up to 1600 MBps
• 4KB Random Read: Up to 110,000 IOPS
• 4KB Random Write: Up to 315,000 IOPS
• Model #: SSDPEKNU512GZX1

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: Highly Effective Energy Saving Running at 1.35 volts at 1600MHz, the DDR3 Low-Voltage UDIMM is able to decrease hardware power consumption effectively without compromising the benefit of the performance. The DDR3 UDIMM also allows the users to save energy up to 20% from the benefits of low energy consumption. Eco-friendly Power Saver Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations. Promising Quality and Durability Silicon Power's DDR3 UDIMM is comprised of selected original memory modules and is 100% tested to guarantee the highest standard of stability, durability and compatibility. The DDR3 UDIMM is ...
• Model #: SP008GLLTU160N02IP

• CAS Latency: CL11
• Voltage: 1.50V
• Timing: 11-11-11-28
• Buffered/Registered: Unbuffered
• Model #: SP008GBLTU160N02

OUT OF STOCK

• 4KB Random Read: 800000 IOPS (4K Blocks)
• 4KB Random Write: 399 MB/s (64K Blocks)
• Max Sequential Read: Up to 7000 MBps
• Endurance: 10.78PBW(64K Random), 51.85PBW(64K Sequential)
• Model #: SSDPF2NV153TZ1Z

• CAS Latency: CL11
• Model #: LYS00NTAT4N20-0

• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx8
• Model #: M393A2K43BB1-CRC4Q

• Device Type: Internal Solid State Drive (SSD)
• Model #: PBE480GS25SSD10

• Model #: M471B1G73BH0

• Max Sequential Read: Up to 550 MBps
• Max Sequential Write: Up to 510 MBps
• Part Number: SSDSC2KG960GZ01
• Operating Temperature: 0°C ~ +70°C
• Model #: SSDSC2KG960GZ01

• MTBF: 2,000,000 hours
• Operating Temperature: 0°C ~ +70°C
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Max Vibration Resistance: Operating: 2.17 GRMS (5 - 700 Hz) Max Non-Operating: 3.13 GRMS (5 - 800 Hz) Max
• Model #: SSDSC2KB019TZ01

• Type: 288-Pin DDR4 SDRAM
• Rank: 1Rx4
• Model #: M393A2K40BB2-CTD7Q

(1)

• CAS Latency: CL15
• Model #: M378A1G43DB0-CPB

• Brand: SAMSUNG
• Capacity: 4GB
• Speed: 1600
• ECC: NON
• Model #: M471B5173QHY-YK0

(3)

• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: M378B5673FH0-CH9

• 4KB Random Read: Up to 91,000 IOPS
• 4KB Random Write: Up to 53,000 IOPS
• Max Sequential Read: Up to 550 MBps
• Endurance: Up to 4.0 DWPD / Up to 14.0 PBW
• Model #: SSDSC2KG019TZ1Z

• Type: Control Module
• Model #: 3RRN8, 03RRN8

• CAS Latency: CL11
• Voltage: 1.20V
• Type: 240-Pin DDR3 SDRAM
• Rank: 4Rx4
• Model #: M386B4G70BM0-YH9

• Type: 240-Pin DDR3 SDRAM
• Model #: M391B5173QH

• Type: Other
• Model #: 15-102217-01xm5

• Type: Control Module
• Model #: MZXLJ3T8HBLS-00AH8

• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx8
• Model #: M393A2K43BB1-CRC0Q

• Type: Control Module
• Model #: MZXLJ1T6HBJR-00AH8

• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 1Rx8
• Model #: M393A1K43BB1-CTD

• Model #: SSDSC2KB038TZ01..

• Model #: SSDSC2KB480GZ01

(1)

• 4KB Random Read: Up to 850,000 IOPS
• 4KB Random Write: Up to 43,000 IOPS
• Max Sequential Read: Up to 550 MBps
• Max Sequential Write: Up to 470 MBps
• Model #: SSDSC2BA400G401

• Model #: SSDSC2KB019TZ1Z..

• Type: 288-Pin DDR4 SDRAM
• Rank: 1Rx8
• Model #: M393A1K43BB0-CTD6Q

• Type: Control Module
• Model #: MZXLJ1T9HBJR-00AH8

(3)

• Max Sequential Read: Up to 460 MBps
• Max Sequential Write: Up to 370 MBps
• Max Shock Resistance: 1500G
• Max Vibration Resistance: 20G
• Model #: SP240GBSS3S55S25AE