Memory

• Part Number: KS3200D4M13516Gx2-Red
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• BIOS/Performance Profile: XMP 2.0
• Model #: KS3200D4M13516G2R

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828LK02-516

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: ME25600-628K1
• Model #: ME25600-628K01-G

• CAS Latency: CL9
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0019

(463)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M2A4800C40

(27)

• CAS Latency: CL16
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Chipset: Major Brand Chipset
• Model #: DDR4-3200-8U-2-GST-Game Pro-Black

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS6400-228K02-716

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB (2 x 4GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS8500-428K02-722

• Brand: PNY
• Capacity: 32GB (2 x 16GB)
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: MN32GK2D43200-TB

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU064GBSVU560F22SN

(354)

• CAS Latency: CL36
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-89
• Model #: F5-5600J3636D32GX2-RS5K

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828K01-135

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: HMCG66AGBSA, HMCG66AGBSA092N, HMCG66AGBSA095N
• Model #: NE-PNR-1873

• CAS Latency: CL19
• Voltage: 1.20V
• Timing: 19-19-19-43
• Buffered/Registered: Unbuffered
• Model #: PSD432G26662

• CAS Latency: CL6
• Voltage: 1.80V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: AT2G1D2S800NA0N18V

• CAS Latency: CL22
• Voltage: 1.20V
• Multi-channel Kit: Single Module
• Timing: 22-22-22-52
• Model #: AV16G4D32X

Limited time offer, ends 04/19

• Part Number: KS6000D5M12516G×2-Black
• CAS Latency: CL38
• Timing: 38-44-44
• Multi-channel Kit: Dual Channel Kit
• Model #: KS6000D5M12516G-S

• Chipset: Major Brand Chipset
• CAS Latency: CL17
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: AT32G2D4D2400RD4N12V

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF432S20IBK2/64

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-20-20
• Recommend Use: High Performance or Gaming Memory
• Model #: KF432C16BB/16

(134)

• CAS Latency: CL22
• Voltage: 1.20V
• Timing: 22-22-22
• Buffered/Registered: Unbuffered
• Model #: CT8G4DFRA32A

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: ME25600-328K1
• Model #: ME25600-328K01-G

• Model #: ME44800-328K1-W680D4U-2L2T

• Brand: Kingston
• Capacity: 64GB
• Speed: DDR5 5600 (PC5 44800)
• ECC: Yes
• Model #: KSM56R46BD4PMI-64HAI

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS12800-828LK01-143

• Voltage: 1.80V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Buffered/Registered: Unbuffered
• Model #: AT2G2D2D800NA018V

(244)

• CAS Latency: CL11
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Buffered/Registered: Unbuffered
• Model #: CT2K51264BD160B

• Brand: NEMIX RAM
• Series: Apple iMac/Mac Mini Compatible Series Memory
• Capacity: 32GB (2 x 16GB)
• Speed: DDR4 2666 (PC4 21300)
• Model #: 0759170866069

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-36
• Buffered/Registered: Unbuffered
• Model #: PVS416G320C6

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 16GB (2 x 8GB)
• Type: 260-Pin DDR4 SO-DIMM
• Model #: 0759170878666

• CAS Latency: CL40
• Voltage: 1.10V
• Chipset: Major Brand Chipset
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0083

• Brand: A-Tech
• Series: Compatible Replacement for Samsung M425R4GA3BB0-CWM M425R4GA3EB0-CWM M425R4GA3PB0-CWM
• Capacity: 32GB
• Type: 262-Pin DDR5 SO-DIMM
• Model #: NE-PNR-2423

(12)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: CT204864BF160B is a single 16GB DDR3L 1.35V Notebook module that operates at speeds up to 1600 MT/s and has a CL11 latency. It is dual voltage and can operate at 1.35V or 1.5V. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204 pins and is compatible with computers that take DDR3L SODIMM memory.
• Model #: CT204864BF160B

• CAS Latency: CL40
• Timing: 40-40-40
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF556S40IBK2-32

(8)

Limited time offer, ends 04/30

• CAS Latency: CL36
• Timing: 36-36-36-80
• ECC: ON-die ECC
• Buffered/Registered: Unbuffered
• Model #: SLDDR48G6000*2

• Chipset: Major Brand Chipset
• CAS Latency: CL22
• Voltage: 1.20V
• Rank: 2Rx8
• Model #: 5053772479203