Memory

(461)

• CAS Latency: CL48
• Timing: 48-48-48-90
• Voltage: 1.10V
• Part Number: CMSX32GX5M2A5600C48
• Model #: CMSX32GX5M2A5600C48

• CAS Latency: CL40
• Timing: 40-40-40
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF556S40IBK2-32

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN

(80)

• CAS Latency: CL40
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K32G64C40U5W

(576)

• CAS Latency: CL40
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-40-40-77
• Model #: CMK64GX5M2B5600Z40

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF432S20IBK2/64

• CAS Latency: CL40
• Voltage: 1.10V
• Recommend Use: AMD & Intel Compatible
• Parts: Lifetime
• Model #: NE-SS-0089

• Brand: Kingston
• Series: FURY Impact
• Capacity: 64GB (2 x 32GB)
• Type: 262-Pin DDR5 SO-DIMM
• Model #: KF556S40IBK2-64

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828LK04-517

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB (2 x 4GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS8500-428K02-722

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828K02-499

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 16GB (2 x 8GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS12800-828LK02-514

(351)

• CAS Latency: CL36
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-89
• Model #: F5-5600J3636D32GX2-RS5W

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Single Channel
• Model #: CT24G56C46S5

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-428LK01-641

(95)

• CAS Latency: CL34
• Timing: 34-34-34-76
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: F5-4800S3434A16GX2-RS

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL11
• Voltage: 1.35V
• Part Number: MR12800-624LK2
• Model #: MR12800-624LK02-131

• CAS Latency: CL7
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD8500-828K02-625

• CAS Latency: CL9
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0019

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS5300-228K02-710

• Brand: Kingston
• Capacity: 64GB
• Speed: DDR5 5600 (PC5 44800)
• ECC: Yes
• Model #: KSM56R46BD4PMI-64HAI

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: HMCG66AGBSA, HMCG66AGBSA092N, HMCG66AGBSA095N
• Model #: NE-PNR-1873

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL40
• Voltage: 1.10V
• Part Number: ME38400-328K2
• Model #: ME38400-328K2-G

• Voltage: 1.80V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Buffered/Registered: Unbuffered
• Model #: AT2G2D2D800NA018V

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT64G56C46S5
• Model #: CT64G56C46S5

• CAS Latency: CL5
• Voltage: 1.80V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: AT2G1D2S667NA0N18V

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: ME25600-328K2
• Model #: ME25600-328K02-G

• CAS Latency: CL40
• Voltage: 1.10V
• Chipset: Major Brand Chipset
• Recommend Use: AMD & Intel Compatible
• Model #: AT8G1D5D4800NS16N11V

(12)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: CT204864BF160B is a single 16GB DDR3L 1.35V Notebook module that operates at speeds up to 1600 MT/s and has a CL11 latency. It is dual voltage and can operate at 1.35V or 1.5V. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204 pins and is compatible with computers that take DDR3L SODIMM memory.
• Model #: CT204864BF160B

(461)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M1A4800C40

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-828LK01-638

• CAS Latency: CL21
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: 0759170870707

• Model #: ME25600-328K1-RAM-32GDR4ECXX-UD-3200

Limited time offer, ends 02/28

• CAS Latency: CL18
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Color: White
• Model #: GS-DDR4-16G-PC-3200-1.35V white

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS6400-228K02-716