Memory

(30)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFS824A

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS832A

(461)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M1A4800C40

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: ME25600-328K2
• Model #: ME25600-328K02-G

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-828LK01-638

• CAS Latency: CL21
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: 0759170870707

(95)

• CAS Latency: CL40
• Timing: 40-39-39-76
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: F5-4800S4039A32GX2-RS

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS6400-228K02-716

• Brand: PNY
• Capacity: 64GB (2 x 32GB)
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: MN64GK2D43200-TB

• Brand: Silicon Power
• Model #: SP016GBSVU560F02

(12)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: M471A1K43CB1-CTD

(95)

• CAS Latency: CL40
• Timing: 40-39-39-76
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: F5-4800S4039A32GX1-RS

(142)

• CAS Latency: CL42
• Timing: 42-42-42
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT32G52C42S5

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 32GB (2 x 16GB)
• Type: 260-Pin DDR4 SO-DIMM
• Model #: MS19200-628K02-535

(47)

• CAS Latency: CL13
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K102464BF186D

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K24G56C46S5

OUT OF STOCK

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL42
• Voltage: 1.10V
• Part Number: ME44800-4828K2
• Model #: ME44800-4828K2-G

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR5 Orignial Series 262-Pin Non-ECC Unbuffered SODIMM Memory
• Capacity: 16GB
• Type: 262-Pin DDR5 SO-DIMM
• Model #: MS41600-618K1-MAG

• Chipset: Major Brand Chipset
• CAS Latency: CL40
• Voltage: 1.10V
• Multi-channel Kit: Single Module
• Model #: AT16G1D5D4800ES8EC4N11V

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB
• Type: 260-Pin DDR4 SO-DIMM
• Model #: MS19200-416K01-2546

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: HMCG78AGBSA, HMCG78AGBSA092N, HMCG78AGBSA095N
• Model #: NE-PNR-1875

• Brand: NEMIX RAM
• Series: Hynix Laptop, AIO All-in-One PC Compatible Series Memory
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Model #: MS25600-628K1-HMA82GS6CJR8N-XN

(6)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: CT2KIT204864BF160B is a 32GB kit consisting of (2) 16GB DDR3L 1.35V Notebook module that operates at speeds up to 1600 MT/s and has a CL11 latency. It is dual voltage and can operate at 1.35V and 1.5V. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204 pins and is compatible with computers that take DDR3L SODIMM memory.
• Model #: CT2KIT204864BF160B

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL17
• Voltage: 1.20V
• Part Number: MR19200-614K2
• Model #: MR19200-614K02-427

• Buffered/Registered: Unbuffered
• Part Number: M425R1GB4PB0-CWM
• Features: M425R1GB4PB0-CWM
• Model #: M425R1GB4PB0-CWM

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB
• Type: 260-Pin DDR4 SO-DIMM
• Model #: 0759170878659

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: HMAA4GS6CJR8N-XN
• Model #: NE-PNR-1851

(18)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Single-Rank x8
• Model #: CT4G4SFS824A

• CAS Latency: CL9
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Parts: Lifetime limited
• Model #: KVR1333D3S9/4G

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: CMSO8GX4M1A2133C15
• Model #: NE-PNR-1597

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL15
• Voltage: 1.20V
• Part Number: MR17000-624K1
• Model #: MR17000-624K01-325

(6)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Model #: M471A2K43CB1-CTD-1

• CAS Latency: CL17
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD19200-628K02-686

• Chipset: Major Brand Chipset
• CAS Latency: CL15
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: AT16G2D4D2133RD4N12V

• CAS Latency: CL11
• Timing: 11-11-11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: NP02

• Chipset: Major Brand Chipset
• CAS Latency: CL9
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Model #: AT8G2D3D1333RD4N135V