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Axiom Memory 8Gb DDR3-1333 Sodimm for Apple - MB1333/8G-AX
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  •  
  • $98.99 
  • $5.99 Shipping
Axiom 16GB DDR3L-1600 Low Voltage SODIMM for Intel - INT1600SB16L-AX
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  •  
  • $343.99 
  • $5.99 Shipping
Axiom 13L73AA-AX 32GB DDR4 3200 MHz SODIMM Memory Module for HP
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  •  
  • $522.99 
  • $5.99 Shipping
Axiom Memory Solutionlc 8gb Ddr3l-1600 Low Voltage Sodimm
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  •  
  • $113.99 
  • $5.99 Shipping
Axiom 8GB DDR3L 1600 (PC3L 12800) Laptop Memory Model AX31600S11Z/8L
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Axiom Memory PC3-12800 SODIMM 1600MHz 4GB Module PA5037U-1M4G-AX
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  • $87.99 
  • $5.99 Shipping
Axiom 32GB 260-Pin DDR4 SO-DIMM DDR4 3200 (PC4 25600) Laptop Memory Model AB175259-AX
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Axiom 32GB 260-Pin DDR4 SO-DIMM DDR4 3200 (PC4 25600) Laptop Memory Model AB175259-AX
  • CAS Latency: CL22
  • Voltage: 1.20V
  • Features: Axiom's DDR4 Modules use the latest evolutionary DRAM design, provides improved speed, power management and reliability. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade. DDR4 Features: 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs. 300% increase in component densities - Equals larger modules for next-generation performance demands. 20% decrease in power consumption - Less power consumed means less wasted resources to cool systems ...
  • Model #: AB175259-AX
Axiom 4GB 204-Pin DDR3 SO-DIMM DDR3 1333 (PC3 10600) Memory for Elo Touch Solutions Model E581416-AX
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Axiom 4GB 204-Pin DDR3 SO-DIMM DDR3 1333 (PC3 10600) Memory for Elo Touch Solutions Model E581416-AX
  • Features: The next evolution of DDR memory is now - Axiom's new DDR3 memory modules, offering breakthroughs in speed and power, are now available. DDR3 has set out to be the new standard in the industry and Axiom has designed and engineered these modules to set that standard. With rigorous testing and endless research and development, you can trust Axiom DDR3's to be the best memory in the market today. DDR3 offers: Powerful performance - DDR3 nearly doubles the speed of DDR2 by offering faster data rates. Low Power Consumption - DDR3 operates on a reduced supply voltage thanks to its efficient design. Higher Bandwidth and Density - DDR3 allows better computer performance thanks to the fastest data transfer rates available.
  • Model #: E581416-AX
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  • $46.00 
  • Free Shipping
Samsung 8GB DDR4 3200MHz PC4-25600 1.2V 1Rx8 260-Pin SODIMM Laptop RAM Memory Module M471A1K43DB1-CWE
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Samsung 8GB DDR4 3200MHz PC4-25600 1.2V 1Rx8 260-Pin SODIMM Laptop RAM Memory Module M471A1K43DB1-CWE
  • CAS Latency: CL22
  • Voltage: 1.20V
  • Buffered/Registered: Unbuffered / Unregistered
  • Parts: Limited Lifetime
  • Model #: M471A1K43DB1-CWE-SM
4Gb Ddr3 Pc3-12800 1600Mhz Sodimm Cl11 204Pin Chip Notebook Memory M471B5273Ch0-Ck0
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SAMSUNG
4Gb Ddr3 Pc3-12800 1600Mhz Sodimm Cl11 204Pin Chip Notebook Memory M471B5273Ch0-Ck0
  • Voltage: 1.50V
  • Buffered/Registered: Unbuffered
  • Model #: 037-9C00DUG7AU4
Ballistix Sport SODIMM 4GB 204-Pin DDR3 SO-DIMM DDR3L 1600 (PC3L 12800) Laptop Memory Model BLS4G3N169ES4
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Ballistix Sport SODIMM 4GB 204-Pin DDR3 SO-DIMM DDR3L 1600 (PC3L 12800) Laptop Memory Model BLS4G3N169ES4
  • CAS Latency: CL9
  • Timing: 9-9-9-24
  • Voltage: 1.35V
  • Buffered/Registered: Unbuffered
  • Model #: BLS4G3N169ES4
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  • $31.99 
4GB RAM Replacement for PNY MN8GK2D31600LV | DDR3 1600MHz PC3-12800 SODIMM 1Rx8 Laptop Memory
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4GB RAM Replacement for PNY MN8GK2D31600LV | DDR3 1600MHz PC3-12800 SODIMM 1Rx8 Laptop Memory
  • CAS Latency: CL11
  • Voltage: 1.35V
  • Buffered/Registered: Unbuffered
  • Features: MN8GK2D31600LV
  • Model #: NE-PNR-2172
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  • $22.59 
Direct from A-Tech Direct from A-Tech
Samsung  M471A1K43BB0-CPB 8GB DDR4-2133 SO-DIMM Memory
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SAMSUNG
Samsung M471A1K43BB0-CPB 8GB DDR4-2133 SO-DIMM Memory
  • Type: 288-Pin DDR4 SDRAM
  • Model #: M471A1K43BB0-CPB_Sam
Samsung M471A1K43BB0-CPB 8GB PC4-17000 DDR4-2133MHz Non-ECC Unbuffered CL15 260-Pin SoDimm 1.2V Sing
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SAMSUNG
Samsung M471A1K43BB0-CPB 8GB PC4-17000 DDR4-2133MHz Non-ECC Unbuffered CL15 260-Pin SoDimm 1.2V Sing
  • Voltage: 1.20V
  • Buffered/Registered: Unbuffered
  • Model #: G3W35-00-B07KG-1
SAMSUNG 4GB 204-Pin DDR3 SO-DIMM DDR3 1600 (PC3 12800) Laptop Memory Model M471B5273DH0-CK0
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SAMSUNG 4GB 204-Pin DDR3 SO-DIMM DDR3 1600 (PC3 12800) Laptop Memory Model M471B5273DH0-CK0
  • CAS Latency: CL11
  • Timing: 11-11-F3
  • Voltage: 1.50V
  • Buffered/Registered: Unbuffered
  • Model #: M471B5273DH0-CK0
Samsung 8GB (PC3L-12800) DDR3L 1.35V 1600 204-Pin M471b1g73bh0-yk0
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SAMSUNG
Samsung 8GB (PC3L-12800) DDR3L 1.35V 1600 204-Pin M471b1g73bh0-yk0
  • Voltage: 1.35V
  • Buffered/Registered: Unbuffered
  • Model #: M471B1G73DB0-YK0-W
Crucial 32GB (2 x 16GB) 204-Pin DDR3 SO-DIMM DDR3L 1600 (PC3L 12800) Laptop Memory Model CT2KIT204864BF160B
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Crucial 32GB (2 x 16GB) 204-Pin DDR3 SO-DIMM DDR3L 1600 (PC3L 12800) Laptop Memory Model CT2KIT204864BF160B
  • CAS Latency: CL11
  • Voltage: 1.35V
  • Buffered/Registered: Unbuffered
  • Features: CT2KIT204864BF160B is a 32GB kit consisting of (2) 16GB DDR3L 1.35V Notebook module that operates at speeds up to 1600 MT/s and has a CL11 latency. It is dual voltage and can operate at 1.35V and 1.5V. It is Unbuffered and is non-ECC. It conforms to the industry standard SODIMM layout of 204 pins and is compatible with computers that take DDR3L SODIMM memory.
  • Model #: CT2KIT204864BF160B
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  • $160.14 
  • Free Shipping
SAMSUNG M471B1G73Qh0-Yk0  8Gb (1X8Gb) Pc312800 Ddr31600Mhz Dual Rank Non Ecc Unbuffered Cl11 Sodimm Memory Module-M471B1G73Qh0-Yk0
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SAMSUNG M471B1G73Qh0-Yk0 8Gb (1X8Gb) Pc312800 Ddr31600Mhz Dual Rank Non Ecc Unbuffered Cl11 Sodimm Memory Module-M471B1G73Qh0-Yk0
  • CAS Latency: CL11
  • Voltage: 1.35V
  • ECC: Yes
  • Buffered/Registered: Registered
  • Model #: M471B1G73QH0-YK0
Samsung 32GB DDR4 3200MHz PC4-25600 1.2V 2Rx8 260-Pin SODIMM Laptop RAM Memory Module M471A4G43AB1-CWE
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SAMSUNG
Samsung 32GB DDR4 3200MHz PC4-25600 1.2V 2Rx8 260-Pin SODIMM Laptop RAM Memory Module M471A4G43AB1-CWE
  • CAS Latency: CL22
  • Voltage: 1.20V
  • Buffered/Registered: Unbuffered / Unregistered
  • Parts: Limited Lifetime
  • Model #: M471A4G43AB1-CWE-SM
SAMSUNG M471B1G73QH0-YK0 8GB 2Rx8 DDR3 PC3L-12800 1600MHz 1.35 LAPTOP MEMORY RAM
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SAMSUNG
SAMSUNG M471B1G73QH0-YK0 8GB 2Rx8 DDR3 PC3L-12800 1600MHz 1.35 LAPTOP MEMORY RAM
  • CAS Latency: CL11
  • Timing: 11-12-F3
  • Voltage: 1.35V
  • Buffered/Registered: Unbuffered
  • Model #: SN3L816-01
SAMSUNG MEMORY
M471A1K43DB1-CWE - Samsung 1x 8GB DDR4-3200 SODIMM PC4-25600S Single Rank x8 Module
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SAMSUNG MEMORY M471A1K43DB1-CWE - Samsung 1x 8GB DDR4-3200 SODIMM PC4-25600S Single Rank x8 Module
  • CAS Latency: CL22
  • Voltage: 1.20V
  • Buffered/Registered: Unbuffered / Unregistered
  • Parts: 3 Years
  • Model #: M471A1K43DB1-CWE
M471B1G73DB0-YK0 Samsung 8gb Pc3-12800 Ddr3-1600mhz So-Dimm Memory
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M471B1G73DB0-YK0 Samsung 8gb Pc3-12800 Ddr3-1600mhz So-Dimm Memory
  • Voltage: 1.35V
  • Buffered/Registered: Unbuffered
  • Model #: 7426964239820