Laptop Memory

(6)

• CAS Latency: CL9
• Timing: 9-9-9-24
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: F3-10666CL9S-8GBSQ

(33)

• CAS Latency: CL11
• Timing: 11-11-11-28
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: F3-12800CL11D-8GBSQ

(27)

• CAS Latency: CL11
• Timing: 11-11-11-28
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: F3-1600C11D-8GRSL

• CAS Latency: CL5
• Voltage: 1.80V
• Parts: Lifetime limited
• Labor: Lifetime limited
• Model #: T800SB2G/V

(14)

• CAS Latency: CL11
• Timing: 11-11-11-28
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: F3-1600C11S-4GRSL

(7)

• CAS Latency: CL9
• Timing: 9-9-9-28
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: F3-12800CL9S-4GBSQ

• CAS Latency: CL2.5
• Timing: 2.5-3-3-7
• Voltage: 2.50V
• Buffered/Registered: Unbuffered
• Model #: 991304

• CAS Latency: CL22
• Voltage: 1.20V
• Option: Standard Edition
• Model #: KCP432SD832

• Brand: Crucial
• Capacity: 32GB
• Type: 262-Pin DDR5 SO-DIMM
• CAS Latency: CL46
• Model #: MTC20C2085S1TC56BD1R

• Model #: MES4S266KF4GX2

• Model #: TED21G667C5-S01

• Model #: TED21G800C6-S01

• Model #: 992037.

• Model #: 996961 1

• Model #: 997038 1

• Model #: 997037 1

• Model #: SNP6VDX7C/8G

• Model #: MES4S240HF4GX2

• Voltage: 1.2V
• Model #: JM3200HSG-8G

• Model #: 991961

• Model #: 616-937713000153559

• Brand: Silicon Power
• Model #: SP016GBSVU560F02

• Voltage: 1.50V
• Model #: SP008GBSTU160N02

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Features: Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP = 2.5V Typical VDDSPD = 2.2V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Height 1.18" (30.00mm)
• Model #: KF432S20IB/8

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800 MHz fCK for 1600 Mb/sec/pin8 independent internal banksProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL-2, or CL-1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +/- 1%)On Die Termination using ODT pinAsynchronous ResetPCB: Height 1.18" (30mm), double sided component MEM_Recommend Use:
• Model #: KVR16LS11/8.

(2)

OUT OF STOCK

• CAS Latency: CL11
• Timing: 11-11-11-28
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: TED3L8G1600C11-S01