Laptop Memory

(20)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Recommend Use: Non-Apple System
• Model #: MR-H8GD316S7D-NA

(98)

• CAS Latency: CL9
• Timing: 9-9-9-28
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: F3-1600C9D-8GRSL

(6)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: MR-H4GD316AS7D

(7)

• CAS Latency: CL9
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: MM-G4GD313S7C

(1,722)

• CAS Latency: CL16
• Timing: 16-16-16-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2400C16S-4GRS

(122)

• CAS Latency: CL9
• Timing: 9-9-9-28
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: F3-12800CL9D-8GBSQ

(576)

• CAS Latency: CL9
• Timing: 9-9-9-24
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: F3-10666CL9D-8GBSQ

(33)

• CAS Latency: CL11
• Timing: 11-11-11-28
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: F3-12800CL11D-8GBSQ

(6)

• CAS Latency: CL9
• Timing: 9-9-9-24
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: F3-10666CL9S-8GBSQ

(10)

• CAS Latency: CL19
• Voltage: 1.20V
• Model #: MR-H4GD426S2E

(3)

• CAS Latency: CL7
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Recommend Use: Apple System
• Model #: MR-H8GD310J7C

(1)

• CAS Latency: CL13
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Recommend Use: For Apple System
• Model #: MM-H8GD318J7D

• Features: The next evolution of DDR memory is now - Axiom's new DDR3 memory modules, offering breakthroughs in speed and power, are now available. DDR3 has set out to be the new standard in the industry and Axiom has designed and engineered these modules to set that standard. With rigorous testing and endless research and development, you can trust Axiom DDR3's to be the best memory in the market today. DDR3 offers: Powerful performance - DDR3 nearly doubles the speed of DDR2 by offering faster data rates. Low Power Consumption - DDR3 operates on a reduced supply voltage thanks to its efficient design. Higher Bandwidth and Density - DDR3 allows better computer performance thanks to the fastest data transfer rates available.
• Model #: E581416-AX

• Model #: M471A5244CB0-CRC_UA

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: Avarum-3L41600D8-SODIMM-1918

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: Avarum-3L41600D8-SODIMM-1920

• CAS Latency: CL4
• ECC: Non-parity
• Model #: 73P3840

• Model #: CM12864X23200DDR1005

• Model #: CM512645300SO015

• Model #: CM512645300SO025

• ECC: Non-ECC
• Buffered/Registered: Unregistered
• Model #: CM25665300DIMM039

• Model #: CM512646400SO009

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800 MHz fCK for 1600 Mb/sec/pin8 independent internal banksProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL-2, or CL-1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +/- 1%)On Die Termination using ODT pinAsynchronous ResetPCB: Height 1.18" (30mm), double sided component MEM_Recommend Use:
• Model #: KVR16LS11/8.

• Model #: C075.396

• CAS Latency: CL19
• Voltage: 1.2V
• Buffered/Registered: Unbuffered
• Part Number: 2S6D41R804GB
• Model #: OWC2S6D41R804GB-C337-SF

• Brand: OWC
• Capacity: 8GB
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3L 1600 (PC3L 12800)
• Model #: OWC1S6T32R808GB-B573-SF

• Brand: OWC
• Capacity: 8GB
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3 1600 (PC3 12800)
• Model #: OWC1S6D32R808GB-B571-SF

• Brand: OWC
• Capacity: 4GB
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3 1333 (PC3 10600)
• Model #: OWC1S3D32R804GB-B228-SF

• Brand: OWC
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Speed: DDR2 800 (PC2 6400)
• Model #: OWC6S4D22R8004P-B962-SF

• Brand: OWC
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Speed: DDR2 667 (PC2 5300)
• Model #: OWC5S3D22R8004P-B958-SF

• Brand: OWC
• Capacity: 4GB
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3 1600 (PC3 12800)
• Model #: OWC1S6D32R804GB-B570-SF

• Brand: OWC
• Capacity: 4GB
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 2400 (PC4 19200)
• Model #: OWC2S4D41R804GB

• Brand: OWC
• Capacity: 4GB
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3 1066 (PC3 8500)
• Model #: OWC8S5D32R804GB-B951-SF

• Brand: OWC
• Capacity: 4GB
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3 1600 (PC3 12800)
• Model #: OWC1S6D31R804GB-B230-SF

• Brand: OWC
• Capacity: 4GB
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 2133 (PC4 17000)
• Model #: OWC2S1D41R804GB-B592-SF

(8)

OUT OF STOCK

• CAS Latency: CL9
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Recommend Use: Non-Apple System
• Model #: MM-G4GD313S7C-NA