• Brand: Samsung
• Model: Galaxy A36 5G
• Technology: 5G
• Storage: 256GB
• Model #: SM-A366E/DS WHT

• CAS Latency: CL9
• Voltage: 1.50V
• Type: 240-Pin DDR3 SDRAM
• Rank: 2Rx4
• Model #: M392B1K70CM0-YH9

(13)

• Color: Black
• Max Sequential Read: Up to 460 MBps
• Max Sequential Write: Up to 460 MBps
• Operating Temperature: 32°F to 140°F (0°C to 60°C)
• Model #: MU-PH2T0S/AM

• Chipset: Major Brand Chipset
• CAS Latency: CL13
• Timing: 13-13-13
• Voltage: 1.50V
• Model #: M393B2G70DB0-CMA

• Chipset: Samsung Chipset
• CAS Latency: CL21
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: M393A8G40MB2-CVF

• Operating System: Android
• Storage: 512GB
• Model #: SM-S938B-5G-12-512-BK

• Part Number: M321R4GA3BB0-CQK
• Rank: 2Rx8
• Model #: M321R4GA3BB0-CQK

(14)

• CAS Latency: CL15
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: M393A2G40DB0-CPB

(1)

• CAS Latency: CL19
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: M393A4K40BB2-CTD

(7)

• CAS Latency: CL9
• Voltage: 1.35V
• Type: 240-Pin DDR3 SDRAM
• Rank: 2Rx4
• Model #: M393B1K70CH0-YH9

• Accessory Type: Parts
• Model #: M386AAG40AM3-CWE

• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 1Rx4
• Model #: M393A2K40CB2-CVF

(5)

• CAS Latency: CL11
• Voltage: 1.5V / 1.35V
• Type: 240-Pin DDR3 SDRAM
• Rank: 2Rx4
• Model #: M393B2G70DB0-YK0

(469)

• Max Sequential Read: Up to 560 MBps
• Max Sequential Write: Up to 530 MBps
• 4KB Random Read: Random (QD1) [IOPS]: 11,000 Random (QD32) [IOPS]: 98,000
• Controller: MKX
• Model #: MZ-77Q4T0B/AM

• Chipset: Major Brand Chipset
• CAS Latency: CL11
• Voltage: 1.50V
• Type: 240-Pin DDR3 SDRAM
• Model #: M393B1K70DH0-CK0

(442)

• Brand: SAMSUNG
• Series: BAR Plus
• Capacity: 64GB
• USB Specification: USB 3.1
• Model #: MUF-64BE4/AM

• Brand: SAMSUNG
• Speed: DDR4 3200 (PC4 25600)
• ECC: Yes
• Buffered/Registered: Registered
• Model #: M393A2K43EB3-CWE

• Max Sequential Read: Up to 7450 MBps
• Max Sequential Write: Up to 6900 MBps
• Controller: Samsung
• Form Factor: M.2 2280
• Model #: MZ-V9P2T0GW

• Chipset: Major Brand Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: M386A8K40BM2-CTD6Q

• Model #: USSSD-18

• Max Sequential Read: Up to 560 MBps
• Max Sequential Write: Up to 530 MBps
• Form Factor: 2.5"
• Capacity: 1TB
• Model #: MZ-77E1T0E

(1)

• CAS Latency: CL17
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: M386A8K40BM1

• Model #: M393AAG40M32-CAE

(2)

• Max Sequential Read: Up to 560 MBps
• Max Sequential Write: Up to 530 MBps
• Form Factor: 2.5"
• Capacity: 500GB
• Model #: MZ-77E500E

OUT OF STOCK

• Model #: M321R2GA3EB2-CCPKC

• Chipset: Samsung Chipset
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 4Rx4
• Model #: 787-797717000333082

• Model #: CNSSD-23

• Max Sequential Read: Up to 7450 MBps
• Max Sequential Write: Up to 6900 MBps
• Controller: Samsung
• Form Factor: M.2 2280
• Model #: MZ-V9P1T0GW

(2)

• 4KB Random Read: Up to 1,100,000 IOPS
• 4KB Random Write: Up to 200,000 IOPS
• Max Sequential Read: Up to 6700 MBps
• Endurance: 1 DWPD
• Model #: MZ-QL27T600

• Model #: MZILG3T8HCLS-00A07

(1)

• Device Type: Internal Solid State Drive (SSD)
• Model #: MZ-77E500B/AM-0

• Type: Control Module
• Model #: M393A4G40BB3-CWE

• Type: 288-Pin DDR4 SDRAM
• Model #: M386A4G40DM0-CPB0QE

• Max Sequential Read: Up to 560 MBps
• Max Sequential Write: Up to 530 MBps
• Form Factor: 2.5"
• Capacity: 2TB
• Model #: MZ-77E2T0E

• Model #: EF-DX725UBEGUJ

• CAS Latency: CL15
• Timing: 15-15-15
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: M386A4G40DM0CPB