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K6X8008C2B-TF55-10pcs
- Product description:
- K6X8008C2B-TF55 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
- The K6X8008C2B-TF55 is fabricated by SAMSUNGsadvanced full CMOS process technology. The K6X8008C2B-TF55 sup-port various operating temperature range for user flexibility of system design. The devices also support low data retention voltage for battery backup operation with a low data retention current.
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Product description:
K6X8008C2B-TF55 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
The K6X8008C2B-TF55 is fabricated by SAMSUN
Gsadvanced full CMOS process technology. The K6X8008C2B-TF55 sup-port various operating temperature range for user flexibility of system design. The devices also support low data retention voltage for battery backup operation with a low data retention current.
Features:
Product Family: K6X8008C2B-F
Process Technology: Full CMOS
Organization: 1M x8
Power Supply Voltage: 4.5 ~ 5.5V
Low Data Retention Voltage: 2.0V (Min)
Three state output and TTL Compatible
Package-Type: 44-TSOP2-400F
Operating Temperature: Industrial(-40~85°C)
K6X8008C2B-TF55 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
The K6X8008C2B-TF55 is fabricated by SAMSUN
Gsadvanced full CMOS process technology. The K6X8008C2B-TF55 sup-port various operating temperature range for user flexibility of system design. The devices also support low data retention voltage for battery backup operation with a low data retention current.
Features:
Product Family: K6X8008C2B-F
Process Technology: Full CMOS
Organization: 1M x8
Power Supply Voltage: 4.5 ~ 5.5V
Low Data Retention Voltage: 2.0V (Min)
Three state output and TTL Compatible
Package-Type: 44-TSOP2-400F
Operating Temperature: Industrial(-40~85°C)
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