Server & Components

• 4KB Random Read: Up to 44,000 IOPS
• 4KB Random Write: Up to 15,500 IOPS
• Max Sequential Read: Up to 470 MBps
• Endurance: Up to 2.5 DWPD / Up to 1.0 PBW
• Model #: SSDSC2KB240GZ1Z

• Endurance: 2.2 DWPD
• MTBF: 2,000,000 hours
• Operating Temperature: 0°C ~ +70°C
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Model #: SSDSC2KB038TZ01

• Weight: 3.0000
• Model #: SSDSC2KB240GZ01

• 4KB Random Read: Up to 85,000 IOPS
• 4KB Random Write: Up to 48,000 IOPS
• Max Sequential Read: Up to 550 MBps
• Endurance: Up to 4.7 DWPD / Up to 4.0 PBW
• Model #: SSDSC2KG480GZ1Z

• Type: Control Module
• Model #: DMRG6

• 4KB Random Read: 1000000 IOPS (4K Blocks)
• 4KB Random Write: 341000 IOPS (4K Blocks)
• Max Sequential Read: Up to 6700 MBps
• Endurance: 17.5 PBW
• Model #: SSDPF2KE032T11Z

• Model #: TGM-M321R4GA3EB2-CCP

• Model #: MZQL2960HCJR-00A07

• Chipset: Samsung Chipset
• CAS Latency: CL3
• Voltage: 1.50V
• Rank: 4Rx4
• Model #: MEM-DR316L-SL02-ER10

• Max Sequential Read: Up to 6600 MBps
• Max Sequential Write: Up to 4200 MBps
• MTBF: 2,000,000 hours
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Model #: SSDPF2KX019T1M1

• Type: Accessory
• Model #: D4ES02-4G

• Chipset: Samsung Chipset
• CAS Latency: CL9
• Voltage: 1.50V
• Rank: 2Rx4
• Model #: MEM-DR380L-SL06-ER13

• 4KB Random Read: Up to 260,000 IOPS
• 4KB Random Write: Up to 18,000 IOPS
• Max Sequential Read: Up to 4500 MBps
• Endurance: 0.4 DWPD
• Model #: SEDC2000BM8/240G

• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: MEM-DR432L-CL02-LR24

• 4KB Random Read: 1000000 IOPS (4K Blocks)
• 4KB Random Write: 200000 IOPS (4K Blocks)
• Max Sequential Read: Up to 6700 MBps
• Endurance: 7.0 PBW
• Model #: SSDPF2KX038T11Z

• MTBF: 2,000,000 hours
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Max Vibration Resistance: Operating: 2.17 GRMS (5 - 700 Hz) Max Non-Operating: 3.13 GRMS (5 - 800 Hz) Max
• Model #: SSDPF2KE016T1N1

• MTBF: 2,000,000 hours
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Max Vibration Resistance: Operating: 2.17 GRMS (5 - 700 Hz) Max Non-Operating: 3.13 GRMS (5 - 800 Hz) Max
• Model #: SSDPF2KX038T1N1

• Chipset: Samsung Chipset
• CAS Latency: CL13
• Voltage: 1.50V
• Rank: 2Rx4
• Model #: MEM-DR316L-SL03-ER18

• Chipset: Samsung Chipset
• CAS Latency: CL21
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: MEM-DR432L-SL03-ER29

• MTBF: 2,000,000 hours
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Max Vibration Resistance: Operating: 2.17 GRMS (5 - 700 Hz) Max Non-Operating: 3.13 GRMS (5 - 800 Hz) Max
• Model #: SSDPF2KE064T1N1

• Chipset: Samsung Chipset
• CAS Latency: CL11
• Voltage: 1.35V
• Rank: 2Rx4
• Model #: MEM-DR380L-SL02-ER16

• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: MEM-DR432L-SL02-ER24

• Chipset: Samsung Chipset
• CAS Latency: CL11
• Voltage: 1.35V
• Rank: 2Rx4
• Model #: MEM-DR316L-SL05-ER16

• Chipset: Micron Chipset
• CAS Latency: CL17
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: MEM-DR432L-CL02-ER24

• Brand: NEMIX RAM
• Series: Supermicro Series Server Memory
• Capacity: 32GB
• Speed: DDR5 4800 (PC5 38400)
• Model #: MR38400-328-SM-MEM-DR532MD-ER48

• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: MTA72ASS16G72LZ-3G2B3
• Type: 288-PIN DDR4 LRDIMM
• Model #: MEM-DR412L-CL02-LR32

• Chipset: Samsung Chipset
• CAS Latency: CL9
• Voltage: 1.35V
• Rank: 2Rx4
• Model #: MEM-DR380L-SL03-ER13

• Chipset: Major Brand Chipset
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: SXN-1314

• Chipset: Samsung Chipset
• CAS Latency: CL11
• Voltage: 1.35V
• Rank: 2Rx4
• Model #: MEM-DR316L-SL02-ER16

• Chipset: Samsung Chipset
• CAS Latency: CL11
• Voltage: 1.50V
• Rank: 2Rx4
• Model #: MEM-DR316L-SL01-ER16

• Chipset: Samsung Chipset
• CAS Latency: CL9
• Voltage: 1.35V
• Rank: 2Rx4
• Model #: MEM-DR316L-SV02-ER13

Limited time offer, ends 02/10

• Model #: HT-ID444-1743308

• Model #: MEM-DR464MC-ER29

• Model #: MEM-DR432L-SL03-ER29

• Model #: MEM-DR412MC-ER32

• Model #: tgm-M393A4K40DB3-CWE