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CMS 4GB (1X4GB) DDR4 19200 2400MHZ NON ECC SODIMM Memory Ram Upgrade Compatible with Fujitsu® Lifebook U728, U747, U748, U757, U758 - C105
- Model #: CM512645300SO025
- $28.00 –
- Free Shipping
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CMS 4GB (1X4GB) DDR4 19200 2400MHZ NON ECC SODIMM Memory Ram Upgrade Compatible with HP/Compaq® Omen Notebook 15-ce012na, 15-ce015dx, 15-ce0xxx, 17-an0xxx - C105
- Model #: CM512646400SO009
- $28.00 –
- Free Shipping
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Kingston 8GB 204-Pin DDR3 SO-DIMM DDR3L 1600 (PC3L 12800) Laptop Memory Model KVR16LS11/8
- CAS Latency: CL11
- Voltage: 1.35V
- Buffered/Registered: Unbuffered
- Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800 MHz fCK for 1600 Mb/sec/pin8 independent internal banksProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL-2, or CL-1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +/- 1%)On Die Termination using ODT pinAsynchronous ResetPCB: Height 1.18" (30mm), double sided component MEM_Recommend Use:
- Model #: KVR16LS11/8.
- $49.00 –
- $20.00 Shipping
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- Brand: AITC KINGSMAN
- Series: VALUE S
- Capacity: 4GB
- Type: 260-Pin DDR4 SO-DIMM
- Model #: AID44G26C19SOD
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OWC 8GB Replacement for QNAP RAM-8GDR3L-SO-1600 8GB DDR3L 1600 PC3L-12800 CL11 2Rx8 204-pin 1.35V Non-ECC SODIMM Memory RAM Module Upgrade
- Brand: OWC
- Capacity: 8GB
- Type: 204-Pin DDR3 SO-DIMM
- Speed: DDR3L 1600 (PC3L 12800)
- Model #: OWC1S6T32R808GB-B573-SF
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OWC 8GB DDR3 1600 PC3-12800 CL11 2Rx8 204-pin 1.5V Non-ECC SODIMM Memory RAM Module
- Brand: OWC
- Capacity: 8GB
- Type: 204-Pin DDR3 SO-DIMM
- Speed: DDR3 1600 (PC3 12800)
- Model #: OWC1S6D32R808GB-B230-SF
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OWC 4GB Replacement for QNAP RAM-4GDR4A0-SO-2666 RAM-4GDR4T0-SO-2666 RAM-4GDR4T1-SO-2666 4GB DDR4 2666 PC4-21300 CL19 1Rx8 260-pin 1.2V Non-ECC SODIMM Memory RAM Module Upgrade
- Brand: OWC
- Capacity: 4GB
- Type: 260-Pin DDR4 SO-DIMM
- Speed: DDR4 2666 (PC4 21300)
- Model #: OWC2S6D41R804GB-B596-SF
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OWC 8GB (2x4GB) DDR3L 1600 PC3L-12800 CL11 2Rx8 204-pin 1.35V Non-ECC SODIMM Memory RAM Module Kit
- Brand: OWC
- Capacity: 8GB (2 x 4GB)
- Type: 204-Pin DDR3 SO-DIMM
- Speed: DDR3L 1600 (PC3L 12800)
- Model #: OWC1S6T32R8008P-B231-SF
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4GB RAM Replacement for Kingston KVR21S15S6/4 | DDR4 2133MHz PC4-17000 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL15
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Major Brand Chips
- Model #: 5053772488434
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4GB RAM Replacement for HP L68529-001, L71643-001, L83673-001 | DDR4 3200MHz PC4-25600 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL22
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: L68529-001, L71643-001, L83673-001
- Model #: NE-PNR-1772
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4GB RAM Replacement for Kingston ACR21D4S15HAG/4G, KCP421SS8/4, KVR21S15S8/4 | DDR4 2133MHz PC4-17000 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL15
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Major Brand Chips
- Model #: 5053772488441
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4GB RAM Replacement for IBM-Lenovo 01AG707, 01FR311, GX70N46761, SM30N76503 | DDR4 2400MHz PC4-19200 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL17
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Major Brand Chips
- Model #: 5053772486287
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8GB RAM Replacement for Micron MT16KTF1G64HZ-1G4, MT16KTF1G64HZ-1G4D1 | DDR3 1333MHz PC3L-10600 SODIMM 2Rx8 Laptop Memory
- CAS Latency: CL9
- Voltage: 1.35V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772475908
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Supermicro Certified MEM-DR380L-HL02-SO16 | Hynix HMT41GS6BFR8A-PB | 8GB PC3-12800 DDR3 1600MHz 2Rx8 Non-ECC SODIMM 204-Pin Laptop Memory RAM
- CAS Latency: CL11
- Voltage: 1.35V
- Buffered/Registered: Unbuffered
- Features: Supermicro Certified MEM-DR380L-HL02-SO16 (HMT41GS6BFR8A-PB)
- Model #: MEM-DR380L-HL02-SO16
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Supermicro Certified MEM-DR380L-HL01-SO16 | Hynix 8GB PC3-12800 DDR3 1600MHz 2Rx8 Non-ECC SODIMM 204-Pin Laptop Memory RAM
- CAS Latency: CL11
- Voltage: 1.35V
- Buffered/Registered: Unbuffered
- Features: Supermicro Certified MEM-DR380L-HL01-SO16 (Hynix)
- Model #: MEM-DR380L-HL01-SO16
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Supermicro Certified MEM-DR440L-SL01-SO26 | Samsung 4GB PC4-21300 DDR4 2666MHz 1Rx16 Non-ECC SODIMM 260-Pin Laptop Memory RAM
- CAS Latency: CL19
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Supermicro Certified MEM-DR440L-SL01-SO26 (Samsung)
- Model #: MEM-DR440L-SL01-SO26
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4GB RAM Replacement for Dell A9210946, SNP4YRP4C/4G | DDR4 2400MHz PC4-19200 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL17
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Major Brand Chips
- Model #: 5053772482753
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4GB RAM Replacement for HP 913802-001, 862397-850, 863483-800 | DDR4 2400MHz PC4-19200 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL17
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: 913802-001, 862397-850, 863483-800
- Model #: NE-PNR-1725
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4GB RAM Replacement for Dell AA086413, SNPKN2NMC/4G | DDR4 2666MHz PC4-21300 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL19
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Major Brand Chips
- Model #: 5053772482760
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8GB RAM Replacement for Samsung M471B1G73AH0-YH9, M471B1G73BH0-YH9 | DDR3 1333MHz PC3L-10600 SODIMM 2Rx8 Laptop Memory
- CAS Latency: CL9
- Voltage: 1.35V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772475946
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4GB RAM Replacement for Samsung M471A5143DB0-CPB, M471A5143EB0-CPB | DDR4 2133MHz PC4-17000 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL15
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772475991
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4GB RAM Replacement for Micron MTA8ATF51264HZ-2G6B1 | DDR4 2666MHz PC4-21300 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL19
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: MTA8ATF51264HZ-2G6B1
- Model #: NE-PNR-2041
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4GB RAM Replacement for HP 937356-800, L10598-850, L33259-001 | DDR4 2666MHz PC4-21300 SODIMM Laptop Memory
- CAS Latency: CL19
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: 937356-800, L10598-850, L33259-001
- Model #: NE-PNR-1759
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4GB RAM Replacement for Hynix HMAG56EXNSA051N | DDR4 3200MHz PC4-25600 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL22
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: HMAG56EXNSA051N
- Model #: NE-PNR-1847
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4GB RAM Replacement for Micron MTA4ATF51264HZ-2G3E1 | DDR4 2400MHz PC4-19200 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL17
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: MTA4ATF51264HZ-2G3E1
- Model #: NE-PNR-2036
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4GB RAM Replacement for Samsung M471A5244BB0-CWE, M471A5244GB0-CWE | DDR4 3200MHz PC4-25600 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL22
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: M471A5244BB0-CWE, M471A5244GB0-CWE
- Model #: NE-PNR-2234
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8GB RAM Replacement for Samsung M471B1G73EB0-YMA | DDR3 1866MHz PC3L-14900 SODIMM 2Rx8 Laptop Memory
- CAS Latency: CL13
- Voltage: 1.35V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772476226
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8GB RAM Replacement for Hynix HMT41GS6AFR8A-G7, HMT41GS6BFR8A-G7, HMT41GS6MFR8A-G7 | DDR3 1066MHz PC3L-8500 SODIMM 2Rx8 Laptop Memory
- CAS Latency: CL7
- Voltage: 1.35V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772475786
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4GB RAM Replacement for Samsung M471A5143EB0-CRC, M471A5143EB1-CRC, M471A5143SB1-CRC | DDR4 2400MHz PC4-19200 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL17
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772475670
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4GB RAM Replacement for IBM-Lenovo 4X70J67434, 5M30H35724, 5M30K59778, SM30E51243 | DDR4 2133MHz PC4-17000 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL15
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Major Brand Chips
- Model #: 5053772486249
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4GB RAM Replacement for IBM-Lenovo SM30G16506 | DDR4 2400MHz PC4-19200 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL17
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Features: Major Brand Chips
- Model #: 5053772486270
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4GB RAM Replacement for Hynix HMA451S6AFR8N-UH | DDR4 2400MHz PC4-19200 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL17
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772476394
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4GB RAM Replacement for Hynix HMA451S6AFR8N-TF | DDR4 2133MHz PC4-17000 SODIMM 1Rx8 Laptop Memory
- CAS Latency: CL15
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772476387
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4GB RAM Replacement for Samsung M471A5244CB0-CPB | DDR4 2133MHz PC4-17000 SODIMM 1Rx16 Laptop Memory
- CAS Latency: CL15
- Voltage: 1.20V
- Buffered/Registered: Unbuffered
- Recommend Use: AMD & Intel Compatible
- Model #: 5053772476189