"SUVTSBPAR20K30F"

(80)

Free PNY Pro Elite 128GB USB Drive w/ Purchase, Limited Time Offer

• CAS Latency: CL32
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-40-40-103
• Model #: CP2K16G64C32U5B

• Max Sequential Read: Up to 7400 MBps
• Max Sequential Write: Up to 6400 MBps
• Form Factor: M.2 2280
• Capacity: 2TB
• Model #: VP4300L2TBM28H

(35)

• CAS Latency: CL11
• Voltage: 1.35V
• Features: Highly Effective Energy Saving Running at 1.35 volts at 1600MHz, the DDR3 Low-Voltage series is able to decrease hardware power consumption effectively without compromising the benefit of the performance. The series also allows the notebook users to save energy up to 20% from the benefits of low energy consumption. Eco-friendly Power Saver Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations. Excellent Compatibility This series is compatible with the latest Intel Haswell platform, ideal for those who are looking for a greener and power-saving alternative while enjoying the ultimate system performance. Silicon Power's DDR3 Low-Voltage series i...
• Model #: SP008GLSTU160N02NE

• Max Sequential Read: Up to 6000 MBps
• Max Sequential Write: Up to 5000 MBps
• Form Factor: M.2 2280
• Capacity: 1TB
• Model #: P400VP1TBM28H

(80)

• CAS Latency: CL40
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K32G60C40U5B

• CAS Latency: CL32
• Voltage: 1.40V
• Timing: 32-40-40-84
• Recommend Use: AMD 600 Series / AMD 800 Series / Intel 600 Series / Intel 700 Series
• Model #: PVV532G640C32K

(80)

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-38-38-80
• Model #: CP2K16G60C36U5W

(23)

• Max Sequential Read: Up to 520 MBps
• Max Sequential Write: Up to 490 MBps
• Package Content: 1 Pack
• Model #: 30TT253X2-128G

• Max Sequential Read: Up to 520 MBps
• Max Sequential Write: Up to 430 MBps
• 4KB Random Read: Up to 50,000 IOPS
• 4KB Random Write: Up to 50,000 IOPS
• Model #: P210S1TB25

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDJ

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDK

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDE

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDL

• Model #: 612521371417

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-76
• Model #: SP032GXLWU60FFDF

• Max Sequential Read: Up to 550 MBps
• Max Sequential Write: Up to 500 MBps
• 4KB Random Read: Up to 50,000 IOPS
• Form Factor: 2.5"
• Model #: P220S512G25

(4)

• Max Sequential Read: Up to 4800 MBps
• Max Sequential Write: Up to 4200 MBps
• Used For: Consumer
• MTBF: 1,500,000 hours
• Model #: SP01KGBP44UD9005

• Max Sequential Read: Up to 500 MBps
• Max Sequential Write: Up to 400 MBps
• Used For: Consumer
• Protocol: SATA
• Model #: SPATIUM S270 SATA 2.5" 240GB

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Unbuffered
• Model #: SP008GILFT320B00

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: Highly Effective Energy Saving Running at 1.35 volts at 1600MHz, the DDR3 Low-Voltage UDIMM is able to decrease hardware power consumption effectively without compromising the benefit of the performance. The DDR3 UDIMM also allows the users to save energy up to 20% from the benefits of low energy consumption. Eco-friendly Power Saver Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations. Promising Quality and Durability Silicon Power's DDR3 UDIMM is comprised of selected original memory modules and is 100% tested to guarantee the highest standard of stability, durability and compatibility. The DDR3 UDIMM is ...
• Model #: SP008GLLTU160N02IP

• Brand: Silicon Power
• Model #: SP032GBSVU480F02

• CAS Latency: 22
• Voltage: 1.2 volts
• Multi-channel Kit: 2
• Timing: 22
• Model #: SP016GBLFU320B22

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Chipset: Value Grade Samsung C die
• Model #: SP008GISFT320B00

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Chipset: Value Grade Samsung C die
• Model #: SP016GISFT320B00

(1,220)

• Max Sequential Read: Up to 1800 MBps
• Max Sequential Write: Up to 1800 MBps
• 4KB Random Read: Up to 220,000 IOPS
• 4KB Random Write: Up to 220,000 IOPS
• Model #: SSDPEKNW020T8X1

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Unbuffered
• Model #: SP016GILFT320B00

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Registered
• Model #: SP016GIRFD320B00

• Brand: Silicon Power
• Model #: SP024GBSVU560P02

• CAS Latency: CL34
• Voltage: 1.45V
• Timing: 34-42-42-84
• Brand: Patriot
• Model #: PVV532G720C34K

(375)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4200 MBps
• 4KB Random Read: Up to 680,000 IOPS
• 4KB Random Write: Up to 850,000 IOPS
• Model #: CT2000P3PSSD8

(3)

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SP032GXLWU60AFDJ

(76)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4800 MBps
• Used For: Consumer
• Protocol: NVMe
• Model #: SP02KGBP44UD9005AC

(76)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4800 MBps
• Used For: Consumer
• Protocol: NVMe
• Model #: SP01KGBP44UD9005AC

(155)

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Buffered/Registered: Unbuffered
• Model #: SP032GXLZU360BDAJ5

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN