"CCR2116-12G-4S"

• Model #: ZXH-H1184

• CAS Latency: CL11
• Timing: 11-11-11-14
• Type: 240-Pin DDR3 SDRAM
• Rank: 4Rx4
• Model #: BD32GX21066MTR26

(9)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• BIOS/Performance Profile: Intel XMP 2.0
• Model #: CT16G4DFD824A

(1)

OUT OF STOCK

• Chipset: Major Brand Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Model #: CT16G4RFD8266

• CAS Latency: CL11
• Timing: 11-11-11-14
• Type: 240-Pin DDR3 SDRAM
• Rank: 2Rx4
• Model #: BD8GX21333MTR23

• Model #: 9435761154203

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in four channel kits up to 64GB
• Model #: CT2K4G4DFS824A

• CAS Latency: CL15
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: AX42400L17C/64G

(2)

• Chipset: Major Brand Chipset
• CAS Latency: CL15
• Timing: 15-15-15
• Voltage: 1.20V
• Model #: M386A4G40DM0-CPB

• Chipset: Samsung Chipset
• CAS Latency: CL40
• Voltage: 1.10V
• Rank: 2S2Rx4 (4Rx4 EC8)
• Model #: NE-PNR-2314

• Voltage: 1.20V
• Compatible System: Cisco
• CAS Latency: CL22
• Part Number: MR25600-324K1
• Model #: MR25600-324K01-CS-UCS-MR-X32G2RW

• Voltage: 1.20V
• Compatible System: Tyan
• CAS Latency: CL22
• Part Number: MR25600-944K2
• Model #: MR25600-944K2-TY-GC68-B8036-LE

• CAS Latency: CL19
• Type: 288-Pin DDR4 SDRAM
• Model #: MIC#CT16G4RFD4266

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL15
• Voltage: 1.20V
• Part Number: MR17000-814K1
• Model #: 81-348-153

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL21
• Voltage: 1.20V
• Part Number: MR23400-324K1
• Model #: MR23400-324K01-2716

• Chipset: Major Brand Chipset
• CAS Latency: CL15
• Voltage: 1.20V
• Rank: 1Rx8
• Model #: NE-PNR-1962

• CAS Latency: CL17
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD19200-418K1-QN-RAM-4GDR4A1-UD-2400

• Model #: 904465474768

• Model #: CT4G4SFS8213

• Chipset: Major Brand Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: FN842

• Chipset: Major Brand Chipset
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: UCS-MR-1X322RVA-RF

• Model #: MTA18ASF1G72HZ-2G1

• Voltage: 1.20V
• Compatible System: Lenovo: ThinkStation P500 Tower * Not all systems compatible with this specific memory chip are listed. Contact us if you have any questions about system compatibility
• CAS Latency: CL15
• Type: 288-Pin DDR4 SDRAM
• Model #: 4X70G78062-AX

• CAS Latency: CL19
• Voltage: 1.20V
• Timing: 19-19-19
• Buffered/Registered: Unbuffered
• Model #: NP109

• Voltage: 1.20V
• Compatible System: Tyan
• CAS Latency: CL22
• Part Number: MR25600-944K2
• Model #: MR25600-944K2-TY-GC68A-B8036-LE

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL15
• Voltage: 1.20V
• Part Number: MR17000-324K1
• Model #: 85-372-160

• Voltage: 1.20V
• Compatible System: M393A1G40DB0-CPB
• CAS Latency: CL15
• Type: 288-Pin DDR4 SDRAM
• Model #: M393A1G40DB0-CPB-110

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL11
• Voltage: 1.35V
• Part Number: MR12800-624LK2
• Model #: 131-462-186

• Voltage: 1.20V
• Compatible System: Tyan
• CAS Latency: CL22
• Part Number: MR25600-328K4
• Model #: MR25600-328K4-TY-GC68A-B8036-LE

• CAS Latency: CL3
• Voltage: 3.30V
• Parts: Lifetime
• Labor: Lifetime
• Model #: KVR133X64C3/256

• Model #: WD-F5036

• Model #: ZXH-H714

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major Brand Chipset
• Recommend Use: Compatible Replacement for Corsair CMX8GX3M1A1333C9, CMX16GX3M2A1333C9
• Model #: NE-PNR-1584

• Model #: AX42133R15C-32G

• Model #: 239245478293

• Model #: C12Y-ZY1158