"PVDM4-32U256-RF"

• Model #: OUG-382

OUT OF STOCK

• 4KB Random Read: Up to 800,000 IOPS
• Max Sequential Read: Up to 7000 MBps
• Endurance: 0.4 DWPB (64K Random) 1.8 DWPB (64K Sequential)
• Max Sequential Write: Up to 3200 MBps
• Model #: SSDPF2NV153TZN1

• Max Sequential Read: Up to 7400 MBps
• Max Sequential Write: Up to 6400 MBps
• Form Factor: M.2 2280
• Capacity: 1TB
• Model #: VP4300L1TBM28H

• CAS Latency: CL32
• Voltage: 1.40V
• Timing: 32-40-40-84
• Brand: Patriot Memory
• Model #: PVV564G640C32K

(452)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Buffered/Registered: Unbuffered
• Model #: TLZGD416G3200HC16CDC

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Unbuffered
• Model #: SP008GILFT320B00

OUT OF STOCK

• Brand: Team
• Capacity: 32GB
• Speed: DDR4 3200 (PC4 25600)
• ECC: Yes
• Model #: TE32GHLEV3MH

(461)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M1A4800C40

• Model #: VP4300L500GM28H

OUT OF STOCK

• MTBF: 2,000,000 hours
• Operating Temperature: 0°C ~ +70°C
• Max Shock Resistance: 1,000 G (Max) at 0.5 msec
• Max Vibration Resistance: Operating: 2.17 GRMS (5 - 700 Hz) Max Non-Operating: 3.13 GRMS (5 - 800 Hz) Max
• Model #: SBFPFWBV614T001

• CAS Latency: CL19
• Voltage: 1.20V
• Timing: 19-19-19-43
• Buffered/Registered: Unbuffered
• Model #: PSD432G26662

(3)

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SP032GXLWU60AFDJ

• Model #: HMA851S6DJR6N-XN

(235)

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED416G3200C22-S01

• Brand: Silicon Power
• Model #: SP016GBLFU320X02

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: hynix-32gb-so-2666

• Voltage: 1.20V
• Compatible System: Synology
• CAS Latency: CL19
• Part Number: MR21300-328K1
• Model #: MR21300-328-SYNX-D4ER01-32G

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: NRG97

• Voltage: 1.2V
• Compatible System: Kingston KSM26RD4/32HCI
• CAS Latency: CL19
• Type: 288-Pin DDR4 SDRAM
• Model #: SKU0401-A071

• Brand: PNY
• Series: NVS
• Interface: PCI Express 2.0 x16
• Chipset Manufacturer: NVIDIA
• Model #: CVCNVS315DVI-PB

• Model #: y-2855

• Brand: NEMIX RAM
• Series: Kingston Laptop, AIO All-in-One PC Compatible Series Memory
• Capacity: 32GB
• Speed: DDR4 3200 (PC4 25600)
• Model #: MS25600-328K1-KVR32S22D832

• Chipset: Major Brand Chipset
• CAS Latency: CL22
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx8
• Model #: RES25600D8C16

• Type: Consumer Electronics
• Color: N/A
• Model #: 332-1662-AX

• Chipset: Major Brand Chipset
• CAS Latency: CL17
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: NE-PNR-1956

• Model #: HMT42GR7AFR4C-PB

• Chipset: Samsung Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: MEM-DR432L-SL04-ER26

• Chipset: Samsung Chipset
• CAS Latency: CL15
• Voltage: 1.20V
• Rank: 4Rx4
• Model #: MEM-DR432L-SL01-LR21

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: MR25600-328K1
• Model #: MR25600-328K1-QN-RAM-32GDR4ECT0-RD-3200

• Model #: 39R7350-26K5842-40K1044-ST3146855SS-ibm

• Chipset: Samsung Chipset
• CAS Latency: CL17
• Voltage: 1.20V
• Rank: 4Rx4
• Model #: MEM-DR464L-SL02-LR24

• Chipset: Major Brand Chipset
• CAS Latency: CL21
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: HMAA8GL7CPR4N-WM

Limited time offer, ends 02/03

• Model #: ZZL-RNU-ASD1651636

• Chipset: Samsung Chipset
• CAS Latency: CL21
• Voltage: 1.20V
• Rank: 2Rx4
• Model #: MEM-DR464MC-ER29 M393A8G40MB2-CVF

• Brand: Hynix
• Capacity: 2GB
• Speed: DDR3 1600 (PC3 12800)
• ECC: NON
• Model #: HMT325S6BFR8C-PB

OUT OF STOCK

• Model #: ZZL-RNU-ASD1651607