Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800 MHz fCK for 1600 Mb/sec/pin8 independent internal banksProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL-2, or CL-1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +/- 1%)On Die Termination using ODT pinAsynchronous ResetPCB: Height 1.18" (30mm), double sided component MEM_Recommend Use:
Features: This Industry Standard 4GB DDR3-1600MHz Dual Rank Unbuffered 1.5V 204-pin CL11 SODIMM is 100% guaranteed to be compatible with your system and to work right the first time. Adding additional memory is the best way to increase the performance of your system. All our memory is built to strict JEDEC standards to meet or exceed the Tier 1 OEM's factory requirements. Our products are also guaranteed by federal law to not affect or void OEM warranties.