"suvtp10kf1b4s"

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Unbuffered
• Model #: SP016GILFT320B00

(158)

• CAS Latency: CL16
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Model #: SP016GXLZU320BDA

(76)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4800 MBps
• Max Shock Resistance: 1500g/0.5ms
• Part Number: SU01KGBP44UD9005SN
• Model #: SU01KGBP44UD9005SN

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Recommend Use: AMD & Intel Compatible / AMD Ryzen Compatible / High Performance or Gaming Memory / Intel Compatible
• Model #: KF432S20IB/32

• Max Sequential Read: Up to 7400 MBps
• Max Sequential Write: Up to 6000 MBps
• Used For: Consumer
• Protocol: NVMe 2.0
• Model #: VP4300L4TBM28H

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF432S20IBK2/64

• CAS Latency: CL20
• Voltage: 1.2 V
• Model #: KF432S20IBK2/32

(2)

• Max Sequential Read: Up to 7000 MBps
• Max Sequential Write: Up to 6500 MBps
• Max Shock Resistance: 1500G/0.5ms
• Used For: Consumer
• Model #: SP02KGBP44US7505AC

OUT OF STOCK

• Endurance: 1 DWPD
• Brand: Phison
• Part Number: XP106H013T84P024T0900
• Form Factor: U.2
• Model #: XP106H013T84P024T0900

• Max Sequential Read: Up to 7400 MBps
• Max Sequential Write: Up to 5800 MBps
• 4KB Random Read: Up to 800,000 IOPS
• 4KB Random Write: Up to 800,000 IOPS
• Model #: VP4300-1TBM28H

OUT OF STOCK

• CAS Latency: CL22
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: KTD-PE432/32G

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU016GBSFU320X02SN

• CAS Latency: CL22
• Timing: 22-22-22
• Model #: AD4S320016G22-SGN

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Chipset: Value Grade Samsung C die
• Model #: SP008GISFT320B00

(158)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Buffered/Registered: Unbuffered
• Model #: SP016GXLZU320BDAJ5

(76)

• Part Number: SU04KGBP44UD9005SN
• Used For: Consumer
• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4500 MBps
• Model #: SU04KGBP44UD9005SN

• CAS Latency: 22
• Voltage: 1.2 volts
• Multi-channel Kit: 2
• Timing: 22
• Model #: SP016GBLFU320B22

(158)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Buffered/Registered: Unbuffered
• Model #: SP032GXLZU320BDAJ7

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Registered
• Model #: SP016GIRFD320B00

(76)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4800 MBps
• Used For: Consumer
• Protocol: NVMe
• Model #: SP01KGBP44UD9005AC

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 16GB
• Speed: DDR4 3200 (PC4 25600)
• Chipset: Value Grade Samsung C die
• Model #: SP016GISFT320B00

• Max Sequential Read: Up to 7400 MBps
• Max Sequential Write: Up to 6400 MBps
• Form Factor: M.2 2280
• Capacity: 2TB
• Model #: VP4300L2TBM28H

• 4KB Random Read: Up to 84,000 IOPS
• 4KB Random Write: Up to 28,000 IOPS
• Max Sequential Read: Up to 550 MBps
• Max Sequential Write: Up to 500 MBps
• Model #: SSDSC2BX012T401

OUT OF STOCK

• Brand: Silicon Power
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Buffered/Registered: Unbuffered
• Model #: SP008GILFT320B00

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Features: Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP = 2.5V Typical VDDSPD = 2.2V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Height 1.18" (30.00mm)
• Model #: KF432S20IB/8

• Max Sequential Read: Up to 14800 MBps
• Max Sequential Write: Up to 14000 MBps
• Form Factor: M.2 2280
• Capacity: 4TB
• Model #: SFYR2S/4T0

(5)

• CAS Latency: CL16
• Timing: 16-18-18-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX32GX4M2A3000C16

• Model #: BD16G5200MC28

• Model #: 342266073023

• Model #: BD16G5200MCN28

(95)

• CAS Latency: CL40
• Timing: 40-40-40
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: F5-5600S4040A16GX2-RS

(7)

• CAS Latency: CL16
• Timing: 16-18-18-36
• Voltage: 1.20V
• Features: 16GB (2 x 8GB) DDR4 SODIMM kit for 6th Generation Intel Core i7 notebooks and NUCs 3000MHz 16-18-18-36 latency 1.2V Auto-overclocking with compatible notebooks (no BIOS configuration required)
• Model #: CMSX16GX4M2A3000C16

(1,255)

• Max Sequential Read: Up to 7300 MBps
• Max Sequential Write: Up to 6600 MBps
• 4KB Random Read: Up to 1,200,000 IOPS
• Form Factor: M.2 2280
• Model #: WDS200T2X0E

• CAS Latency: CL20
• Voltage: 1.2 V
• Model #: KF432S20IB/16

• Model #: 648735377679

OUT OF STOCK

• CAS Latency: CL22
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx8
• Model #: KTD-PE432E/16G