


Capacity
512GB
Form Factor
M.2 2280
Interface
PCIe Gen4x4
Speed
512GB sequential read up to 7450MB/s, sequential write up to 3500MB/s, random 4K Read/Write up to 500/900K1
Operating Temperature
0oC to 70oC (32oF to 158oF)
Storage Temperature
-40oC to 85oC (-40oF to 185oF)
Shock Resistant
1500G, duration 0.5ms, Half Sine Wave2
Vibration Resistant
10-2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z) 2
TBW
512GB: 500TBW
NAND Flash
3D TLC
MTBF
1,500,000 Hours
1Up to 7500 MB/s read transfer, write transfer speeds lower. Speeds based on internal testing. Actual performance may vary.
2Shock resistant (1500G, duration 0.5ms, Half Sine Wave) and vibration resistant (10-2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z)). Based on internal testing. Actual performance may vary.
Warranty Notice:
This product does not include manufacturer warranty when purchased or used outside of its designated sales region. By purchasing internationally, you acknowledge that warranty support from the manufacturer will not be available.