Micron® 3D QLC NAND Flash
Series: 2500
Form factor: M. 2 Type 2280
PCIe® Gen4 x4
NVMe 1.4 c
- Number of namespaces supported: 1
- Round robin arbitration: not weighted
- Autonomous power state transitions
TCG/Pyrite 2.01 compliant non-self-encrypting drive (non-SED)
TCG/Opal 2.02 compliant self-encrypting drive (SED)
Capacity (unformatted): 1024GB
Endurance: Total bytes written (TBW): Up to 600TB
HMB (Host Memory Buffer)
DRAM-Less
Industry-standard 512 byte sector size support
Security- Digitally signed firmware
Self-monitoring, analysis, and reporting technology (SMART)
Device self-test
Power loss protection for data-at-rest
Power loss signal support
Performance
- Sequential 1MB READ: Up to 7100 MB/s
- Sequential 1MB WRITE: Up to 6000 MB/s
- Random 4KB READ: Up to 1000 KIOPS
- Random 4KB WRITE: Up to 1000 KIOPS
Latency
- Read (TYP): 50µs
- Write (TYP): 12µs
Reliability
- MTTF: 2 million device hours4
- Static and dynamic wear leveling
- Uncorrectable bit error rate (UBER): <1 sector per 1015 bits read
Operating temperature
- Commercial (0°C to +70°C)
- System management bus temperature monitoring (SMBus)
Micron redundant array of independent NAND (RAIN) technology
Field upgradeable firmware - Firmware activation without reset
Electrical specification - Power supply: 3.3V ±5%
Notes:
1.
User capacity: 1GB = 1 billion bytes.
2. Typical I/O performance numbers as measured fresh-out-of-box (FOB).
3. 4KB, queue depth 1 transfers used for READ / WRITE latency values.
4. The product achieves a mean time to failure (MTTF) based on population statistics not relevant to individual units.
5. Temperature measured by TCASE.