Learn more about the SAMSUNG MZ-VAP4T0B/AM
Model| Brand | SAMSUNG |
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| Series | 9100 PRO |
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| Model | MZ-VAP4T0B/AM |
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| Device Type | Internal Solid State Drive (SSD) |
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| Used For | Consumer |
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Details| Form Factor | M.2 2280 |
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| Capacity | 4TB |
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| Memory Components | Samsung V NAND TLC (V8) |
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| Interface | PCI-Express 5.0 x4 |
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| Protocol | NVMe 2.0 |
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| Controller | In-House Controller |
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| Cache | 4GB LPDDR4X Intelligent TurboWrite 2.0: 964GB |
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| Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
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Performance| Max Sequential Read | Up to 14800 MBps |
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| Max Sequential Write | Up to 13400 MBps |
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| 4KB Random Read | Up to 2,200,000 IOPS |
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| 4KB Random Write | Up to 2,600,000 IOPS |
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| Terabytes Written (TBW) | 2400TB |
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| HeatSink | without HeatSink |
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Environmental| Power Consumption (Idle) | 5.7mW Device Sleep (L1.2) |
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| Power Consumption (Active) | 9.0W / 8.2W (Read/Write) |
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Dimensions & Weight| Height | 2.38mm |
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| Width | 22.15mm |
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| Depth | 80.15mm |
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| Weight | 9g |
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Additional Information| First Listed on Newegg | March 18, 2025 |
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Customer Reviews of the SAMSUNG MZ-VAP4T0B/AM