Learn more about the SAMSUNG MZ-VAP1T0CW
Model| Brand  | SAMSUNG | 
|---|
| Series  | 9100 PRO | 
|---|
| Model  | MZ-VAP1T0CW | 
|---|
| Device Type  | Internal Solid State Drive (SSD) | 
|---|
| Used For  | Consumer | 
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Details| Form Factor  | M.2 2280 | 
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| Capacity  | 1TB | 
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| Memory Components  | Samsung V NAND TLC (V8) | 
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| Interface  | PCI-Express 5.0 x4 | 
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| Protocol  | NVMe 2.0 | 
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| Controller  | In-House Controller | 
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| Cache  | 1GB LPDDR4X Intelligent TurboWrite 2.0: 242GB | 
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| Encryption  | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) | 
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Performance| Max Sequential Read  | Up to 14700 MBps | 
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| Max Sequential Write  | Up to 13300 MBps | 
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| 4KB Random Read  | Up to 1,850,000 IOPS | 
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| 4KB Random Write  | Up to 2,600,000 IOPS | 
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| Terabytes Written (TBW)  | 600TB | 
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| HeatSink  | with HeatSink | 
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Environmental| Power Consumption (Idle)  | 3.3mW Device Sleep (L1.2) | 
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| Power Consumption (Active)  | 7.6W / 7.2W (Read/Write) | 
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Dimensions & Weight| Height  | 8.88mm | 
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| Width  | 25mm | 
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| Depth  | 80.15mm | 
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| Weight  | 28g | 
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Additional Information| First Listed on Newegg  | March 18, 2025 | 
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Customer Reviews of the SAMSUNG MZ-VAP1T0CW