Learn more about the SAMSUNG MZ-VAP4T0CW
ModelBrand | SAMSUNG |
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Series | 9100 PRO |
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Model | MZ-VAP4T0CW |
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Device Type | Internal Solid State Drive (SSD) |
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Used For | Consumer |
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DetailsForm Factor | M.2 2280 |
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Capacity | 4TB |
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Memory Components | Samsung V NAND TLC (V8) |
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Interface | PCI-Express 5.0 x4 |
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Protocol | NVMe 2.0 |
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Controller | In-House Controller |
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Cache | 4GB LPDDR4X |
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Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
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PerformanceMax Sequential Read | Up to 14800 MBps |
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Max Sequential Write | Up to 13400 MBps |
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4KB Random Read | Up to 2,200,000 IOPS |
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4KB Random Write | Up to 2,600,000 IOPS |
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Terabytes Written (TBW) | 2400TB |
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HeatSink | with HeatSink |
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EnvironmentalPower Consumption (Idle) | 5.7mW Device Sleep (L1.2) |
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Power Consumption (Active) | 9.0W / 8.2W (Read/Write) |
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Dimensions & WeightHeight | 8.88mm |
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Width | 25mm |
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Depth | 80.15mm |
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Weight | 28g |
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Additional InformationDate First Available | March 18, 2025 |
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Customer Reviews of the SAMSUNG MZ-VAP4T0CW