IRFP260NPBF TO-247 NMOS MOS N-Channel Power MOSFET Transistor, High Dissipation and Current (Pack of 5pcs)

Product Description:

The IRFP260NPbF is a high-performance power MOSFET designed for demanding applications in commercial and industrial settings. With its TO-247 package, it offers superior thermal performance over the TO-220, making it ideal for high power levels.

Key Features:

- Continuous Drain Current (ID): Up to 50A at 25°C, 35A at 100°C

- Pulsed Drain Current (IDM): Up to 200A

- Power Dissipation (PD): 300W at 25°C

- Thermal Resistance (RJC): 0.50°C/W

- Avalanche Energy Ratings: EAS 560mJ, EAR 30mJ

- Operating Junction Temperature: -55 to +175°C

- Storage Temperature Range: -55 to +175°C

Electrical Characteristics:

- Gate-to-Source Voltage (VGS): ±20V

- Drain-to-Source Breakdown Voltage (V(BR)DSS): 200V

- Static Drain-to-Source On-Resistance (RDS(on)): Typically 0.04

- Gate Threshold Voltage (VGS(th)): 2.0 to 4.0V

- Forward Transconductance (gfs): 27S at VDS = 50V, ID = 28A

- Total Gate Charge (Qg): Typically 234nC

- Turn-On Delay Time (td(on)): Typically 17ns

- Rise Time (tr): Typically 60ns

- Fall Time (tf): Typically 48ns

Thermal and Mechanical Specifications:

- Mounting Torque for 6-32 or M3 screw: 10 lbfin (1.1Nm)

- Linear Derating Factor: 2.0 W/°C

- Soldering Temperature: 300°C for 10 seconds (1.6mm from case)

Package Information:

- Package Type: TO-247

- Lead-Free and RoHS Compliant

This MOSFET is equipped with advanced process technology, dynamic dv/dt rating, and ease of paralleling, making it a reliable choice for fast switching applications.