Permanent short circuit peak voltage: - 5.1 V up to 5.1 V
Transistor:
*** FEATURES: automatic identification of components automatic identification of connection pins identification of special features such as detection of protection diodes and detection of shunt resistors bipolar transistors: measurement of current gain and leakage current, silicon and germanium diode detection threshold voltage measurement for enrichment MOSFE
Ts forward voltage measurement for diodes, LEDs and base-junctions Transistor transmitter automatic and manual extinguishing ***
SPECIFICATIONS: Specification Summary at 20°C (68°F) unless otherwise specified short circuit peak current cut off: - 5.5 mA up to 5.5 mA
Permanent short circuit peak voltage: - 5.1 V up to 5.1
V transistor: gain
range (HFE): 4 - 65, 000
Gain precision: ± 3% ± 5
Hfe maximum collector-to-emitter voltage (VCEO): 2.0 V - 3.0 V base-emitter voltage accuracy
VBE: -2% -20 mV up to +2% + 20 mV base-emitter voltage VBE for
Darlington transistor (shunted): 0.95 V - 1.80 V ( 0.0. 75 V - 1.80
V) base-emitter shunt resistance threshold: 50 k - 70 k collector current
BJT: 2.45 mA - 2.55 mA acceptable leakage current
BJT: 0.7 mA
MOSFET: gate-source
voltage range: 0.1 V - 5.0
V accuracy of only he: -2% -20 mV up to +2% + 20 mV drain current: 2.45 mA - 255 mA gate resistance: 8
k depletion drain current: 4.5 mA drain-source currents
JFET: 0.5 mA - 5.5 mA thyristor/Triac: gate
current: 4.5 mA
Hold: 5.0
mA diode: test
current: 5.0
mA voltage accuracy: -2% -20 mV up to +2% + 20 mV forward voltage for
LED identification: 1.50 V - 4.00
V short-circuit threshold: 10
battery:
type: MN21 / L1028 / GP23A 12 V alkaline range.
Voltage: 7. 50 V - 12
V alarm threshold: 8.25 V.
Dimensions: 103 x 70 x 20 mm ( 4.1 x 2.8 x 0.8 inches).
Weight per product (nett): 0.098 kg ( 3.5 oz).
Working temperature: 0 °C ~ 50 °C (32F ~ 122F)