"DDR4 2666 64GB"

• Type: 288-Pin DDR4 SDRAM
• Rank: 2Rx4
• Model #: BD32GX22666MQR29

• Type: 288-Pin DDR4 SDRAM
• Rank: 4Rx4
• Model #: BD64G2666MQR96

• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Buffered/Registered: Unbuffered
• Model #: NE-SS-0047

• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Buffered/Registered: Unbuffered
• Model #: NE-SS-0048

(5)

• CAS Latency: CL16
• Voltage: 1.20V
• Timing: 16-18-18-35
• Recommend Use: AMD & Intel Compatible / AMD 300 Series / AMD 400 Series / AMD 500 Series / AMD TRX40 / Intel 300 Series / Intel 400 Series
• Model #: CMW64GX4M4A2666C16

• CAS Latency: CL19
• Voltage: 1.2V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Desktops
• Model #: OWC2U6D42R8064S

• CAS Latency: CL19
• Voltage: 1.20V
• Model #: 840104308516

Limited time offer, ends 05/31

• Part Number: KS3200D4N12016G2
• CAS Latency: CL18
• Recommend Use: AMD & Intel Compatible
• Parts: 3 Years
• Model #: KS3200D4N12016G2

(23)

• CAS Latency: CL16
• Voltage: 1.20V
• Timing: 16-18-18-35
• Chipset: AMD X399 Compatible
• Model #: CMK64GX4M4A2666C16

(5)

• CAS Latency: CL16
• Voltage: 1.20V
• Timing: 16-18-18-35
• ECC: Non-ECC
• Model #: CMK64GX4M4A2666C16W

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: NE-SS-0076

• CAS Latency: CL19
• Features: With decades of experience specializing in memory and server parts, Black Diamond Memory is a proven manufacturer in the industry. Our products currently support over 200,000 configurations as well as support for enterprise servers, desktops, laptops, and a large variety of other devices.
• Model #: BD32GX22666MQN28

(3)

• CAS Latency: CL19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2666C19D-64GRS

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0055

(2)

• CAS Latency: CL19
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Buffered/Registered: Unbuffered
• Model #: CT2K32G4DFD8266

• CAS Latency: CL19
• Chipset: Major Brand Chipset
• Buffered/Registered: Unbuffered
• Model #: RUD21300D8C2K64

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0051

• CAS Latency: CL19
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Parts: Lifetime warranty
• Model #: RSO21300D8C2K64

• CAS Latency: CL19
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD21300-628K04-693

• Part Number: KS4800D5N11016G2
• CAS Latency: CL40
• Timing: 40-40-40
• Multi-channel Kit: Dual Channel Kit
• Model #: KS4800D5N11016G2

(12)

• CAS Latency: CL19
• Model #: 76TT26NUS2R8-32GK2

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 64GB (2 x 32GB)
• Type: 260-Pin DDR4 SO-DIMM
• Model #: MS21300-328K02-G

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0049

• CAS Latency: CL19
• Voltage: 1.20V
• Timing: 19-19-19
• Buffered/Registered: Unbuffered
• Model #: NRG114

• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Buffered/Registered: Unbuffered
• Model #: NE-SS-0047

(60)

• CAS Latency: CL19
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Major Brand Chipset
• Model #: CT4K16G4DFD8266

• CAS Latency: CL19
• Buffered/Registered: Unbuffered
• Parts: Lifetime warranty
• Model #: B0D7MBWNCY

• Chipset: Major Brand Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Model #: AT16G4D4D2666RD4N12V

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: ME21300-328K2
• Model #: ME21300-328K02-G

• CAS Latency: CL19
• Voltage: 1.2V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Workstations, Servers, and NAS Systems
• Model #: OWC2E6D42R8064P

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: MR21300-628K4
• Model #: MR21300-628K04-457

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.35V
• Part Number: MD21300-628K4
• Model #: MD21300-628K4-DL-PET40

(172)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce power consumption by up to 40% and extend battery life Faster bursts access speeds for improved sequential data throughout Optimized for next generation processors and platforms
• Model #: CT2K32G4SFD8266

• CAS Latency: CL19
• Voltage: 1.20V
• Timing: 19-19-19
• Buffered/Registered: Unbuffered
• Model #: NP90

• CAS Latency: CL19
• Voltage: 1.2V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Desktops
• Model #: OWC2U6D41R8064K

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: MD21300-328K2
• Model #: 0759170863563

• Model #: 840104303986

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: MSE21300-628K4
• Model #: 0759170864027

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.35V
• Part Number: MD21300-628K4
• Model #: MD21300-628K4-DL-PET140

• Model #: 840104303948

(1)

• Chipset: Major Brand Chipset
• CAS Latency: CL19
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: M386A8K40BM2-CTD

• Model #: BM64GKITD42666DTAT5

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: MR21300-924K1B
• Model #: 0759170858927