"crucial ram"

• Model #: CT16G64C52CS5

(149)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT2K32G56C46S5
• Model #: CT2K32G56C46S5

(149)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT32G48C40S5

• Model #: CT2K32G56C46S5-4K

• Model #: CT2K32G56C46S5-53

• Model #: CP2K16G56C46U5-1K

• Model #: CP32G56C46U5-OR

• Brand: Crucial
• Model #:

(676)

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• CAS Latency: CL38
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 38-48-48-96
• Model #: CMK32GX5M2D6000Z38

• Model #: CP32G56C46U5

(676)

• CAS Latency: 30
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 30-36-36-76
• Model #: CMK32GX5M2B6000C30

(18)

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-44-44-96
• Model #: CMK32GX5M2E6000C36

(5)

• CAS Latency: CL38
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 38-44-44-96
• Model #: CMK32GX5M2B6000C38

(7)

• CAS Latency: CL36
• Voltage: 1.30V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-44-44-96
• Model #: CMK32GX5M2F6000Z36

• Brand: Crucial
• Model #:

(2)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4500 MBps
• Form Factor: M.2 2280
• Capacity: 1TB
• Model #: CT1000E100SSD8

(8)

• Max Sequential Read: Up to 11,000 MBps
• Max Sequential Write: Up to 9,500 MBps
• Form Factor: M.2 2280
• Capacity: 1TB
• Model #: CT1000P510SSD8

• Model #: 972365693398

(1)

• Model #: 906173089869

• Model #: 972365693541

• Model #: 972365693527

(32)

• CAS Latency: CL11
• Voltage: 1.35V/1.5V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Micron Chipset
• Model #: CT2K51264BD160BJ

(49)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

(149)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT32G56C46S5
• Model #: CT32G56C46S5

• Model #: 9435761126835

(6)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in four channel kits up to 64GB
• Model #: CT8G4DFD824A

(2)

• Type: 204-Pin DDR3 SO-DIMM
• Compatibility: For Apple Notebook
• CAS Latency: 9
• Voltage: 1.35V/1.5V
• Model #: CT4G3S1339M

(2)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2C8G3S160BMCEU

(79)

• Type: 204-Pin DDR3 SO-DIMM
• Compatibility: For Apple iMac
• CAS Latency: 11
• Voltage: 1.35V/1.5V
• Model #: CT2K8G3S160BM

(1)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFS8266

(149)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G48C40S5

(172)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT-16G4SFD8266

(2)

• CAS Latency: CL13
• Voltage: 1.35V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Major Brand Chipset
• Model #: CT102464BD186D

(264)

• CAS Latency: CL11
• Timing: 11-11-11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: CT2KIT102464BF160B

• Type: 260-Pin DDR4 SO-DIMM
• CAS Latency: 19
• Voltage: 1.2V
• Model #: CT32G4S266M

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: CT8G4SFD824A is a 8GB Dual Ranked DDR4 Notebook module that operates at speeds up to 2400 MT/s and has a CL17 latency. It is an Unbuffered SODIMM. It conforms to the industry standard DDR4 SODIMM layout of 260 pins and is compatible with systems that take DDR4 2400MT/s SODIMM memory.
• Model #: CT8G4SFD824A