Components & Storage

(60)

• Max Sequential Read: Up to 6600 MBps
• Max Sequential Write: Up to 3500 MBps
• Form Factor: M.2 2280
• Capacity: 500GB
• Model #: CT500P310SSD8

(750)

• Max Sequential Read: Up to 540 MBps
• Max Sequential Write: Up to 500 MBps
• Part Number: CT1000BX500SSD1
• Used For: Consumer
• Model #: CT1000BX500SSD1

• Brand: Patriot
• Series: Core Series
• Capacity: 48GB
• Type: 262-Pin DDR5 SO-DIMM
• Model #: PSC548G5602HS

• Brand: SAMSUNG
• Capacity: 4GB
• Speed: DDR3 1333 (PC3 10600)
• ECC: NON
• Model #: M471B5273BH1-CH9

Limited time offer, ends 01/15

• Model #: iWZCRw

• Brand: OWC
• Capacity: 64GB
• Speed: DDR5 5600 (PC5 44800)
• ECC: Yes
• Model #: OWC5R6D52R464GB-C234-SF

• Voltage: Regular Voltage
• Type: 240-Pin DDR3 SDRAM
• Rank: 2Rx4
• Model #: M393B2G70DB0-CMAQ3

• Brand: NEMIX RAM
• Series: SuperMicro Server/Workstation Compatible Series Memory
• Capacity: 64GB
• Speed: DDR5 5600 (PC5 44800)
• Model #: MR44800-924K1-B13DEE

• Brand: OWC
• Capacity: 8GB
• Type: 262-Pin DDR5 SO-DIMM
• Speed: DDR5 4800 (PC5 38400)
• Model #: OWC4S8D51R608GB-B838-SF

• Model #: lppl-7889

• CAS Latency: CL40
• Voltage: 1.10V
• Chipset: Samsung Chipset
• Recommend Use: Compatible Replacement for Samsung M323R1GB4DB0-CWM, M323R1GB4PB0-CWM
• Model #: NE-PNR-2257

• Model #: 904384936835

• Brand: NEMIX RAM
• Series: Samsung Server/Workstation Compatible Series Memory
• Capacity: 96GB
• Speed: DDR5 5600 (PC5 44800)
• Model #: MR44800-9624K1-M321RYGA0PB0-CWM

• Voltage: 1.10V
• Compatible System: Samsung
• CAS Latency: CL40
• Part Number: MS38400-328K1
• Model #: MS38400-328K1-M425R4GA3BB0-CQK

• Brand: Hynix
• Capacity: 4GB
• Speed: 2666
• ECC: NON
• Model #: HMA851S6CJR6N-VK

• Brand: SAMSUNG
• Capacity: 8GB
• Speed: DDR3 1600 (PC3 12800)
• ECC: NON
• Model #: M471B1G73CB0-YK0

• Type: Control Module
• Model #: MTFDKCE7T6TFR-1BC15A

• Chipset: Major Brand Chipset
• CAS Latency: CL11
• Voltage: 1.50V
• Type: 240-Pin DDR3 SDRAM
• Model #: M393B2G70BH0-CK0

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT32G56C46S5
• Model #: CT32G56C46S5

• Chipset: Major Brand Chipset
• Rank: 1Rx8
• Parts: 5 Years
• Model #: 5M30V06980

• CAS Latency: CL7
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: 5053772476059

• Battery Type: N/A
• Model #: 4741640563871

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• Compatible System: IBM
• Model #: 47C8660

• Voltage: 1.5V
• Compatible System: Toshiba Satellite C855D-S5100, C855D-S5357 C855D-S5105
• CAS Latency: CL9
• Timing: 9-9-9
• Model #: 849005044318

• Model #: M391T2953EZ3-

• Brand: Hynix
• Capacity: 2GB
• Speed: 2400
• ECC: NON
• Model #: HMA425S6AFR6N-UH

• Voltage: 1.35V
• Compatible System: Toshiba Satellite C55-A-1Mw, C55-A5100, C55-A5204
• CAS Latency: CL11
• Timing: 11-11-11
• Model #: 849005064118

• Voltage: Low Voltage
• Type: 240-Pin DDR3 SDRAM
• Rank: 1Rx8
• Model #: HMT451U6AFR8A-PB

• CAS Latency: CL5
• Model #: M395T5663QZ4-CE

• Model #: SAMSUNG-MZ-N5E500

• Voltage: 1.5V
• Compatible System: Toshiba Satellite C655-S5549, C655D-S5518, C655-S5512
• CAS Latency: CL7
• Timing: 7-7-7
• Model #: CM5126410600SOX20207

• Model #: 731029888026

• Model #: K5P0T-LE

• Model #: 011110229557

(1)

• Model #: LYSB016YJX3PY