Memory

• Model #: 994787617646

(2,244)

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 9-9-9-24
• Model #: F3-12800CL9D-8GBRL

• Model #: LYSB00KFNEJ9U

(1)

• Option: N/A
• Model #: M471B1G73EB0-YK0

• CAS Latency: CL19
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: M393A1K43BB1-CTD6Q

• CAS Latency: CL17
• Voltage: 1.20V
• Model #: M471A1K43CB1-CRC (8

• Model #: HMA81GS6DJR8N-XN N0

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828LK01-2532

• Model #: SK HMA41GR7MFR8N-TF

• CAS Latency: CL11
• Model #: M378B1G73QH0-CK0

• Brand: Micron
• Capacity: 8GB
• Speed: 2666
• ECC: NON
• Model #: MTA8ATF1G64HZ-2G6E1

• Brand: Micron
• Capacity: 8GB
• Speed: DDR3 1600 (PC3 12800)
• ECC: NON
• Model #: MT16KTF1G64HZ-1G6E2

• Model #: HMA81GU6CJR8N-VK

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: HMA451U6AFR8N-TF X2

(1,052)

• CAS Latency: CL9
• Voltage: 1.50V
• Timing: 9-9-9-24
• Buffered/Registered: Unbuffered
• Model #: F3-1600C9S-8GXM

(31)

• CAS Latency: CL11
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 11-11-11-28
• Model #: F3-1600C11D-8GIS

(87)

• CAS Latency: CL10
• Voltage: 1.65V
• Multi-channel Kit: Dual Channel Kit
• Timing: 10-12-12-31
• Model #: F3-2400C10D-8GZH

• Model #: M-M-17B003OSTDPI

• CAS Latency: CL19
• Model #: HMA81GR7AFR8N-VK

• Model #: M471B1G73DB0-YK0_UA

• Accessory Type: Parts
• Model #: NWH-KSN-KCP426NS8/8

• Model #: Pc2-5300

• Model #: A00G1H3TTK

• Brand: Total Micro
• Capacity: 8GB
• Type: 204-Pin DDR3 SO-DIMM
• Part Number: B4U40AT-TM
• Model #: B4U40AT-TM

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in four channel kits up to 64GB
• Model #: CT2K4G4DFS824A

(584)

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 9-9-9-24
• Model #: F3-12800CL9D-8GBSR

• Model #: M-M-2000 B00VKYKNY8

• CAS Latency: CL15
• Timing: 15-15-15-36
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: PSD48G213381S

(2)

• CAS Latency: CL11
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: HMT41GS6MFR8C-PB

• Chipset: Micron Chipset
• CAS Latency: CL9
• Voltage: 1.50V
• Rank: 2Rx4
• Model #: MEM-DR380L-CL01-ER13

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: HMAG68EXNSA051N
• Model #: NE-PNR-1844

• CAS Latency: CL11
• Multi-channel Kit: Dual Channel Kit
• Chipset: Major Brand Chipset
• Buffered/Registered: Unbuffered
• Model #: RMEMCT102461BD160B

• CAS Latency: CL9
• Chipset: Major Brand Chipset
• Buffered/Registered: Unbuffered
• Model #: RUD10600S8C2K8

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-428LK02-642

(1,129)

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 9-10-9-28
• Model #: F3-14900CL9D-8GBSR

(81)

OUT OF STOCK

• CAS Latency: CL10
• Voltage: 1.50V
• Multi-channel Kit: Quad Channel Kit
• Timing: 10-10-10-30
• Model #: F3-12800CL10Q-32GBZL