Memory

(1)

• CAS Latency: CL36
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-89
• Model #: F5-5600J3636C16GX2-TZ5K

• Model #: 994787617561

OUT OF STOCK

• Brand: Team
• Series: T-Create Master
• Capacity: 96GB (4 x 24GB)
• Speed: DDR5 6400 (PC5 51200)
• Model #: CTCMD596G6400HC32AQC01

• Brand: NEMIX RAM
• Series: Synology Compatible Series NAS Memory
• Capacity: 64GB (4 x 16GB)
• Speed: DDR4 2666 (PC4 21300)
• Model #: ME21300-628K4-SYN-SA3200D

• CAS Latency: CL40
• Voltage: 1.10V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Major Brand Chipset
• Model #: AT8G4D5D4800NS16N11V

(3)

• CAS Latency: CL19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2666C19D-64GRS

• Brand: V-Color
• Series: STANDARD ECC R-DIMM
• Capacity: 64GB (4 x 16GB)
• Speed: DDR5 4800 (PC5 38400)
• Model #: TR516G48S840Q

(3)

• Brand: V-Color
• Series: OC R-DIMM
• Capacity: 64GB (4 x 16GB)
• Speed: DDR5 7000 (PC5 56000)
• Model #: TRA516G70S834Q

(6)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in four channel kits up to 64GB
• Model #: CT8G4DFD824A

(235)

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED416G3200C22-S01

• CAS Latency: CL15
• Multi-channel Kit: Quad Channel Kit
• Type: 288-Pin DDR4 SDRAM
• Model #: KVR21R15D4K4/64

• Brand: NEMIX RAM
• Series: ASRock Server Motherboard Compatible Series Memory
• Capacity: 128GB (4 x 32GB)
• Speed: DDR5 5600 (PC5 44800)
• Model #: MR44800-314K4-ASR-TRX50WS

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 32GB (4 x 8GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS10600-828LK04-781

(1)

• CAS Latency: CL11
• Buffered/Registered: Unbuffered
• Model #: hynix-4gb-ud-1600

(644)

• CAS Latency: CL10
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 10-10-10-30
• Model #: F3-12800CL10D-16GBXL

• Voltage: 1.50V
• Compatible System: Apple Mac Systems
• Rank: 2Rx8
• Parts: Lifetime
• Model #: NE-MAC-0052

(9)

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-96
• Model #: F5-6000J3636F16GX2-TZ5K

(104)

• CAS Latency: CL11
• Voltage: 1.65V
• Multi-channel Kit: Dual Channel Kit
• Timing: 11-13-13-31
• Model #: F3-2400C11D-16GXM

• Model #: f51692f0-6dea-4

• Brand: NEMIX RAM
• Series: ASUS Server Motherboard Compatible Series Memory
• Capacity: 256GB (4 x 64GB)
• Speed: DDR5 5600 (PC5 44800)
• Model #: MR44800-924K4-ASR-WRX90E-SAGE

(30)

• CAS Latency: CL40
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-40-40
• Model #: F5-5600J4040D48GX2-RM5RK

• CAS Latency: CL32
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-39-39
• Model #: KF564C32BBEAK2-64

(60)

• CAS Latency: CL19
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Major Brand Chipset
• Model #: CT4K16G4DFD8266

(2,222)

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 9-9-9-24-2N
• Model #: F3-12800CL9D-4GBRL

• Brand: Team
• Series: T-Create Master
• Capacity: 64GB (4 x 16GB)
• Speed: DDR5 6400 (PC5 51200)
• Model #: CTCMD564G6400HC32AQC01

(3)

• CAS Latency: CL34
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 34-45-45-108
• Model #: F5-6800J3445G16GX2-RS5K

• Model #: HMAA8GR7AJR4N-XN

• CAS Latency: CL19
• Voltage: 1.2 V
• Model #: KVR26S19S6/4

(117)

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 9-9-9-24
• Model #: F3-10600CL9D-4GBNS

• Model #: M-M-2001 B003GSLDJ0

(1,400)

• CAS Latency: CL16
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Model #: F4-3000C16D-16GISB

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in four channel kits up to 64GB
• Model #: CT2K4G4DFS824A

• CAS Latency: CL15
• Model #: MES4S213FF4G18X2

(584)

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 9-9-9-24
• Model #: F3-12800CL9D-8GBSR

(1,052)

• CAS Latency: CL9
• Voltage: 1.50V
• Timing: 9-9-9-24
• Buffered/Registered: Unbuffered
• Model #: F3-1600C9S-8GXM

• CAS Latency: CL4
• Voltage: 1.80V
• Multi-channel Kit: Dual Channel Kit
• Buffered/Registered: Unbuffered
• Model #: KVR533D2N4K2/2G