Memory

Limited time offer, ends 02/15

• Part Number: KS3200D4N12016G
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: KS3200D4N12016G

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD832A

(77)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS824A

• CAS Latency: CL40
• Timing: 40-40-40
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF556S40IBK2-32

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: ME25600-628K2
• Model #: ME25600-628K02-G

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K24G56C46S5

(461)

• CAS Latency: CL48
• Timing: 48-48-48-90
• Voltage: 1.10V
• Part Number: CMSX32GX5M2A5600C48
• Model #: CMSX32GX5M2A5600C48

(48)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS832A

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF432S20IBK2/64

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: AT8G2D5S5600NS16N11V

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Single Channel
• Model #: CT24G56C46S5

• Brand: Kingston
• Series: FURY Impact
• Capacity: 64GB (2 x 32GB)
• Type: 262-Pin DDR5 SO-DIMM
• Model #: KF556S40IBK2-64

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 16GB (2 x 8GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS12800-828LK02-514

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB (2 x 4GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS8500-428K02-722

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828LK04-517

Limited time offer, ends 02/15

• Part Number: KS4800D5N11016G
• CAS Latency: CL40
• Timing: 40-40-40
• Multi-channel Kit: Dual Channel Kit
• Model #: KS4800D5N11016G

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828K02-499

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K48G56C46S5

(6)

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Parts: Limited Lifetime
• Model #: M471A1K43DB1-CWE-SM

(94)

• CAS Latency: CL34
• Timing: 34-34-34-76
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: F5-4800S3434A16GX2-RS

• CAS Latency: CL7
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD8500-828K02-625

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: ME25600-328K2
• Model #: ME25600-328K02-G

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT64G56C46S5
• Model #: CT64G56C46S5

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Single Channel
• Model #: CT48G56C46S5

(327)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFRA266

• CAS Latency: CL9
• Voltage: 1.50V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD10600-428LK01-641

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFS832A

• CAS Latency: CL21
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: 0759170870707

• CAS Latency: CL5
• Voltage: 1.80V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: AT2G1D2S667NA0N18V

(461)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M1A4800C40

• CAS Latency: CL9
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0019

• Model #: KVR56S46BS8-16

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL40
• Voltage: 1.10V
• Part Number: ME38400-328K2
• Model #: ME38400-328K2-G