Memory

(3)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Model #: M471A2K43BB1-CRC

(58)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFD824A

Free Kingston 1TB SSD w/ Purchase

• CAS Latency: CL32
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-39-39
• Model #: KF564C32BWEAK2-32

• Brand: NEMIX RAM
• Series: Samsung Server/Workstation Compatible Series Memory
• Capacity: 8GB
• Speed: DDR4 3200 (PC4 25600)
• Model #: ME25600-818K1-M391A1K43DB2-CWE

• CAS Latency: CL28
• Voltage: 1.40V
• Timing: 28-40-40-100
• Brand: Patriot
• Model #: VEU532G6028K

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-38-38
• Model #: KF560C36BBEK2-64

• Chipset: Major Brand Chipset
• CAS Latency: CL40
• Voltage: 1.10V
• Rank: 1Rx8
• Model #: 5053772479098

• CAS Latency: CL36
• Voltage: 1.20V
• Timing: 36-36-36-68
• Brand: Patriot
• Model #: PVVR532G52C36

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Features: Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP = 2.5V Typical VDDSPD = 2.2V to 3.6V On-Die termination (ODT) 16 internal banks; 4 groups of 4 banks each Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Height 1.18" (30.00mm)
• Model #: KF432S20IB/8

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: MR21300-624K2
• Model #: MR21300-624K02-453

• Voltage: 1.35V
• Compatible System: Samsung
• CAS Latency: CL13
• Part Number: ML14900-344K1
• Model #: ML14900-344K1-SG-M386B4G70BM0-CMA

• CAS Latency: CL38
• Voltage: 1.45V
• Multi-channel Kit: Dual Channel Kit
• Timing: 38-48-48-128
• Model #: KF580C38RSAK2-32

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL15
• Voltage: 1.20V
• Part Number: MR17000-324K1
• Model #: MR17000-324K01-DLSVR

• Chipset: Major Brand Chipset
• CAS Latency: CL17
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Model #: AT32G4D4D2400LQ4N12V

(1)

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-36-36-96
• Model #: F5-6000J3636F32GX2-FX5W

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL17
• Voltage: 1.20V
• Part Number: MR19200-614K2
• Model #: MR19200-614K02-427

• Voltage: 1.50V
• CAS Latency: CL9
• Type: 240-Pin DDR3 SDRAM
• Model #: KVR1333D3N9/2G

• Chipset: Major Brand Chipset
• CAS Latency: CL40
• Voltage: 1.10V
• Multi-channel Kit: Quad Channel Kit
• Model #: AT128G4D5D4800RQ4EC8N11V

(143)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K8G56C46S5

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL19
• Voltage: 1.20V
• Part Number: ME21300-628K2
• Model #: ME21300-628K02-540

• Model #: 305340056060

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR5 Orignial Series 262-Pin Non-ECC Unbuffered SODIMM Memory
• Capacity: 16GB
• Type: 262-Pin DDR5 SO-DIMM
• Model #: MS41600-618K1-MAG

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Parts: Limited Lifetime
• Model #: M471A4G43AB1-CWE-SM

• CAS Latency: CL40
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-40-40
• Model #: KF556C40BBAK2-32

(3)

• Part Number: TMXFCL1680838KS-DK
• Timing: 38-48-48-128
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: TMXFCL1680838KS-DK

• Brand: NEMIX RAM
• Series: ASUS Server Motherboard Compatible Series Memory
• Capacity: 256GB (4 x 64GB)
• Speed: DDR5 5600 (PC5 44800)
• Model #: MR44800-924K4-ASR-WRX90E-SAGE

(207)

• CAS Latency: CL32
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-39-39-84
• Model #: CTCED532G6400HC32ADC01

• CAS Latency: CL15
• Voltage: 1.20V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD17000-628K01-151

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin ECC Unbuffered SODIMM Memory
• Capacity: 16GB
• Type: 260-Pin DDR4 SO-DIMM
• Model #: MSE21300-628K01-2328

(3)

• CAS Latency: CL30
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 30-36-36-76
• Model #: CMH32GX5M2B6000C30

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in four channel kits up to 64GB
• Model #: CT2K4G4DFS824A

• CAS Latency: CL16
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18
• Model #: KF432C16BB2AK2/16

(117)

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 9-9-9-24
• Model #: F3-1600C9D-8GAO

(1)

• CAS Latency: CL40
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-50-50-96
• Model #: CMK64GX5M2D6000C40

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL11
• Voltage: 1.50V
• Part Number: ME12800-828K1
• Model #: ME12800-828K01-2675

• CAS Latency: CL38
• Voltage: 1.45V
• Multi-channel Kit: Dual Channel Kit
• Timing: 38-48-48-128
• Model #: KF580C38RSK2-32