Memory

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• CAS Latency: CL38
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 38-44-44-96
• Model #: CMK32GX5M2B6000Z38

(6)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: MM-H8GD316J7D

(146)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT2K32G48C40S5

• CAS Latency: CL22
• Multi-channel Kit: Dual Channel Kit
• Chipset: Major Brand Chipset
• ECC: Yes
• Model #: RLMUD-25600-32-28

(74)

• CAS Latency: CL40
• Voltage: 1.10V
• Timing: 40-39-39
• Buffered/Registered: Unbuffered
• Model #: CT16G48C40U5

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL11
• Voltage: 1.35V
• Part Number: MR12800-624LK2
• Model #: MR12800-624LK02-131

(1)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: MM-DR4/16G/2666-S

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS6400-228K02-716

• CAS Latency: CL30
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 30-36-36
• Model #: KF560C30BBEK2-32

• CAS Latency: 22
• Voltage: 1.2 volts
• Multi-channel Kit: 2
• Timing: 22
• Model #: SP016GBLFU320B22

(2)

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-44-44
• Model #: CMH16GX5M2E6000Z36WGWL

(1)

• CAS Latency: CL32
• Voltage: 1.40V
• Timing: 32-39-39-84
• Recommend Use: Intel B660 / Intel Z690
• Model #: CTCED596G6400HC32ADC01

(27)

• CAS Latency: CL16
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Chipset: Major Brand Chipset
• Model #: DDR4-3200-8U-2-GST-Game Pro-Black

(27)

• CAS Latency: CL16
• Multi-channel Kit: Dual Channel Kit
• Timing: 16-18-18-38
• Chipset: Major Brand Chipset
• Model #: DDR4-3200-8U-2-GST-RGB-GameTurbo-White

(5)

• CAS Latency: CL32
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-38-38-80
• Model #: GTMXFAL3264832KWK

(232)

• CAS Latency: CL11
• Timing: 11-11-11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: CT102464BF160B

• CAS Latency: CL11
• Model #: 76TT16NUSL1R8-4GK2

(91)

• CAS Latency: CL40
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K32G60C40U5B

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: HMCG66AGBSA, HMCG66AGBSA092N, HMCG66AGBSA095N
• Model #: NE-PNR-1873

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS832A

(146)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K48G56C46S5

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR2 Orignial Series 200-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 4GB (2 x 2GB)
• Type: 200-Pin DDR2 SO-DIMM
• Model #: MS5300-228K02-710

(8,040)

• CAS Latency: CL18
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 18-22-22-42
• Model #: F4-3600C18D-32GVW

(91)

• CAS Latency: CL32
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-40-40-103
• Model #: CP2K16G64C32U5W

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: CT8G4SFD824A is a 8GB Dual Ranked DDR4 Notebook module that operates at speeds up to 2400 MT/s and has a CL17 latency. It is an Unbuffered SODIMM. It conforms to the industry standard DDR4 SODIMM layout of 260 pins and is compatible with systems that take DDR4 2400MT/s SODIMM memory.
• Model #: CT8G4SFD824A

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-44-44
• Model #: KF560C36BBE2K2-32

(49)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

• CAS Latency: CL36
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 36-38-38
• Model #: KF560C36BBEAK2-16

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 8GB (2 x 4GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS8500-428K02-722

(58)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFD824A

• Brand: V-Color
• Series: OC R-DIMM
• Capacity: 128GB (4 x 32GB)
• Speed: DDR5 5600 (PC5 44800)
• Model #: TRA532G56D846Q

• Brand: A-Tech
• Series: Compatible Replacement for Samsung M321R4GA0BB0-CQKET
• Capacity: 32GB
• Speed: DDR5 4800 (PC5 38400)
• Model #: NE-PNR-2432

• Chipset: Major OEM Samsung, Micron, Hynix Chipset
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: RRD25600D4C4K128
• Model #: RRD25600D4C4K128-XR11

(15)

• CAS Latency: CL40
• Voltage: 1.25V
• Multi-channel Kit: Dual Channel Kit
• Timing: 40-40-40-77
• Model #: CMK16GX5M2B5200C40

• CAS Latency: CL30
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 30-36-36
• Model #: KF560C30BBEAK2-64

• Brand: V-Color
• Series: OC R-DIMM
• Capacity: 64GB (4 x 16GB)
• Speed: DDR5 6400 (PC5 51200)
• Model #: TRA516G64D852Q