Laptop Memory

• CAS Latency: CL38
• Timing: 38-38-38
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF560S38IBK2-32

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• CAS Latency: CL20
• Voltage: 1.2 V
• Model #: KF432S20IBK2/32

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: KCP432SS8/16

• CAS Latency: CL40
• Timing: 40-40-40
• Voltage: 1.10V
• Part Number: KF556S40IB-16
• Model #: KF556S40IB-16

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• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: M471A2K43CB1-CTD

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF432S20IBK2/16

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU016GBSFU320X02SN

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• CAS Latency: CL11
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: KVR16S11S8/4

• Model #: B-SAMSUNG M425R2GA3BB0-CQK

• CAS Latency: CL40
• Timing: 40-40-40
• Voltage: 1.10V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF556S40IBK2-32

• Model #: 404669068591

• CAS Latency: CL20
• Voltage: 1.2 V
• Model #: KF432S20IB/16

• Brand: Kingston
• Capacity: 16GB
• Speed: DDR5 5600 (PC5 44800)
• Buffered/Registered: Unbuffered
• Model #: KCP556SS8-16

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Recommend Use: AMD & Intel Compatible / AMD Ryzen Compatible / High Performance or Gaming Memory / Intel Compatible
• Model #: KF432S20IB/32

• Brand: Silicon Power
• Model #: SP016GBSVU560F02

• Brand: Silicon Power
• Model #: SP016GBSVU480F02

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Model #: KCP426SD8/16

• Brand: OWC
• Capacity: 32GB (2 x 16GB)
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3 1600 (PC3 12800)
• Model #: OWC1S6D32R8032P-B230-SF

• Model #: KVR56S46BS6-8

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: Major Brand Chips
• Model #: 5053772487390

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: KCP426SS8/16

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: hynix-4gb-so-3200AA X2

(1)

• Voltage: 1.20V
• Model #: M471A1K43BB1--CRC

• Brand: ADATA
• Series: Premier
• Capacity: 16GB
• Type: 260-Pin DDR4 SO-DIMM
• Model #: AD4S320016G22-BGN

• Model #: 404669047411

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800 MHz fCK for 1600 Mb/sec/pin8 independent internal banksProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL-2, or CL-1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +/- 1%)On Die Termination using ODT pinAsynchronous ResetPCB: Height 1.18" (30mm), double sided component MEM_Recommend Use:
• Model #: KVR16LS11/8.

• Chipset: Major Brand Chipset
• CAS Latency: CL15
• Voltage: 1.20V
• Type: 288-Pin DDR4 SDRAM
• Model #: SNPCRXJ16C/16G

(4)

• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: LYSB0067GGPXC

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• CAS Latency: CL11
• Voltage: 1.35V
• Features: Highly Effective Energy Saving Running at 1.35 volts at 1600MHz, the DDR3 Low-Voltage series is able to decrease hardware power consumption effectively without compromising the benefit of the performance. The series also allows the notebook users to save energy up to 20% from the benefits of low energy consumption. Eco-friendly Power Saver Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations. Excellent Compatibility This series is compatible with the latest Intel Haswell platform, ideal for those who are looking for a greener and power-saving alternative while enjoying the ultimate system performance. Silicon Power's DDR3 Low-Voltage series i...
• Model #: SP008GLSTU160N02NE

• Model #: 568529242627

(2)

• Model #: HMA81GS6CJR8N-XN

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: KCP432SS8/8

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Major Brand Chips
• Model #: 5053772488717

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: KCP432SS6/8

• Model #: HMA851S6AFR6N_UA