(171)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce Power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next Generation Processors and Platforms
• Model #: CT4G4SFS8266

(329)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFRA266

(84)

• CAS Latency: CL40
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K32G64C40U5W

(74)

• CAS Latency: CL40
• Voltage: 1.10V
• Timing: 40-39-39
• Buffered/Registered: Unbuffered
• Model #: CT16G48C40U5

(84)

• CAS Latency: CL32
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-40-40-103
• Model #: CP2K16G64C32U5W

(49)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

(329)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFRA266

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT32G4SFD832A

(134)

• CAS Latency: CL19
• Voltage: 1.20V
• Timing: 19-19-19
• Buffered/Registered: Unbuffered
• Model #: CT8G4DFRA266

(144)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT32G48C40S5

(37)

• Part Number: CT2000X9SSD9
• Color: Black
• Max Sequential Read: Up to 1050 MBps
• Model #: CT2000X9SSD9

(77)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS824A

(84)

• CAS Latency: CL40
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: Compatible with 12th Gen Intel® Core™ or AMD RyzenTM 7000 Series Desktop CPUs and above
• Model #: CP2K32G60C40U5W

(232)

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: CT51264BF160B

(1)

• Max Sequential Read: Up to 14,900 MBps
• Max Sequential Write: Up to 13,800 MBps
• Form Factor: M.2 2280
• Capacity: 4TB
• Model #: CT4000T710SSD8

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS832A

(377)

• Max Sequential Read: Up to 3500 MBps
• Max Sequential Write: Up to 1900 MBps
• 4KB Random Read: Up to 350,000 IOPS
• 4KB Random Write: Up to 460,000 IOPS
• Model #: CT500P3SSD8

(144)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G48C40S5

(144)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT2K32G48C40S5

(43)

• Max Sequential Read: Up to 14,100 MBps
• Max Sequential Write: Up to 12,600 MBps
• 4KB Random Read: Up to 1,500,000 IOPS
• 4KB Random Write: Up to 1,800,000 IOPS
• Model #: CT4000T705SSD3

(1)

• Max Sequential Read: Up to 14,900 MBps
• Max Sequential Write: Up to 13,800 MBps
• Form Factor: M.2 2280
• Capacity: 1TB
• Model #: CT1000T710SSD5

(144)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered / Unregistered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K48G56C46S5

• Model #: 972365693183

(1)

• Max Sequential Read: Up to 14,900 MBps
• Max Sequential Write: Up to 13,800 MBps
• Form Factor: M.2 2280
• Capacity: 2TB
• Model #: CT2000T710SSD5

(43)

• Max Sequential Read: Up to 14,500 MBps
• Max Sequential Write: Up to 12,700 MBps
• 4KB Random Read: Up to 1,550,000 IOPS
• 4KB Random Write: Up to 1,800,000 IOPS
• Model #: CT2000T705SSD3

• Max Sequential Read: 6600 megabits_per_second
• Max Sequential Write: 3500 megabytes_per_second
• Connector: NVMe
• Form Factor: M.2 2280
• Model #: CT500P310SSD801

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: CT8G4SFD824A is a 8GB Dual Ranked DDR4 Notebook module that operates at speeds up to 2400 MT/s and has a CL17 latency. It is an Unbuffered SODIMM. It conforms to the industry standard DDR4 SODIMM layout of 260 pins and is compatible with systems that take DDR4 2400MT/s SODIMM memory.
• Model #: CT8G4SFD824A

(58)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFD824A

(1)

• CAS Latency: CL19
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Timing: 19-19-19
• Model #: CT8G4DFS8266-CRUCIAL

(329)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFRA266

(54)

• Max Sequential Read: Up to 7300 MBps
• Max Sequential Write: Up to 6800 MBps
• Part Number: CT1000T500SSD8
• Used For: Consumer
• Model #: CT1000T500SSD8

(6)

• Max Sequential Read: Up to 11,000 MBps
• Max Sequential Write: Up to 9,500 MBps
• Part Number: CT1000P510SSD8
• Used For: Consumer
• Model #: CT1000P510SSD8

(60)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4DFD8266

(1)

• Max Sequential Read: Up to 5000 MBps
• Max Sequential Write: Up to 4500 MBps
• Form Factor: M.2 2280
• Capacity: 1TB
• Model #: CT1000E100SSD8

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD832A

(1,237)

OUT OF STOCK

• Max Sequential Read: Up to 560 MBps
• Max Sequential Write: Up to 510 MBps
• 4KB Random Read: Up to 95,000 IOPS
• 4KB Random Write: Up to 90,000 IOPS
• Model #: CT250MX500SSD1