"sp silicon power 3600mhz 16gb (2x8)"

(163)

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Buffered/Registered: Unbuffered
• Model #: SP016GXLZU360BDAJ5

(10)

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SP032GXLWU60AFDJ

• CAS Latency: CL36
• Timing: 36-46-46-86
• Brand: Silicon Power
• Chipset: (AMD EXPO Exclusive)
• Model #: SP016GXLWU60FBDKAI

• CAS Latency: CL18
• Model #: PVSR432G360C8K

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-20-20-40
• Recommend Use: AMD & Intel Compatible
• Model #: PVS432G360C8K

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Recommend Use: AMD & Intel Compatible
• Model #: PVS416G360C8

OUT OF STOCK

• Model #: SP032GIRVE560FH0

• Model #: SP016GBLFU240X02

(36)

• CAS Latency: CL11
• Voltage: 1.35V
• Features: Highly Effective Energy Saving Running at 1.35 volts at 1600MHz, the DDR3 Low-Voltage series is able to decrease hardware power consumption effectively without compromising the benefit of the performance. The series also allows the notebook users to save energy up to 20% from the benefits of low energy consumption. Eco-friendly Power Saver Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations. Excellent Compatibility This series is compatible with the latest Intel Haswell platform, ideal for those who are looking for a greener and power-saving alternative while enjoying the ultimate system performance. Silicon Power's DDR3 Low-Voltage series i...
• Model #: SP008GLSTU160N02NE

(11)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN

• CAS Latency: CL32
• Voltage: 1.40V
• Timing: 32-39-39-102
• Buffered/Registered: Unbuffered
• Model #: SU032GXLWU64AFDKSN

• CAS Latency: CL17
• Voltage: 1.35V
• Timing: 17-19-19-39
• Recommend Use: AMD & Intel Compatible
• Model #: PVS416G360C7K

(3)

• Max Sequential Read: Up to 460 MBps
• Max Sequential Write: Up to 370 MBps
• Form Factor: 2.5"
• Capacity: 240GB
• Model #: SP240GBSS3S55S25AE

(193)

• Max Sequential Read: Up to 500 MBps
• Max Sequential Write: Up to 450 MBps
• Form Factor: 2.5"
• Capacity: 1TB
• Model #: SU001TBSS3A55S25SN

• CAS Latency: CL20
• Voltage: 1.35V
• Timing: 20-26-26-46
• Buffered/Registered: Unbuffered
• Model #: PVE2416G360C0

• Model #: SP004GBLFU266X02

• CAS Latency: CL11
• Voltage: 1.50V
• Timing: 11-11-11-28
• Buffered/Registered: Unbuffered
• Model #: SP008GBLTU160N02

• Chipset: SK Hynix
• CAS Latency: CL9
• Timing: 9
• Voltage: 1.35V
• Model #: TLR364G13O49L

• Model #: 264505742531

• Model #: 322002873933

• Voltage: 1.50V
• Model #: SP008GBSTU160N02

• Model #: 537470441847

• Model #: 884945275750

• Brand: SAMSUNG
• Series: M321R2GA3PB0-CWM
• Capacity: 16GB
• Speed: DDR5 5600 (PC5 44800)
• Model #: M321R2GA3PB0-CWM

• CAS Latency: CL17
• Voltage: 1.20V
• ECC: Yes
• Buffered/Registered: Unbuffered
• Model #: NE-SS-0601

• Model #: SP004GBLTU160N02.

• Brand: Silicon Power
• Model #: SP016GBSVU560F02

• Model #: 904957051293

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Recommend Use: AMD & Intel Compatible
• Model #: PVSR416G320C8

(5)

• Speed Class Rating: UHS-I / Class 10
• Read Speed: Read speed up to 85MB/s
• Write Speed: Write speed up to 15MB/s
• Model #: SP032GBSDHAU1V10

• Model #: 621924966632

• Model #: SP004GBLFU240X02

• CAS Latency: CL40
• Voltage: 1.10V
• Chipset: Samsung Chipset
• Recommend Use: Compatible Replacement for Samsung M323R2GA3DB0-CWM
• Model #: NE-PNR-2258

• Model #: 9357980748141

• Model #: 508922635909