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PNY 64GB (2 x 32GB) 260-Pin DDR4 SO-DIMM DDR4 2666 (PC4 21300) Laptop Memory Model MN64GK2D42666

  • DDR4 2666 (PC4 21300)
  • CAS Latency CL19
  • 1.20V
  • Dual Channel Kit
Specs
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Learn more about the PNY Technologies, Inc. MN64GK2D42666

Model
Brand PNY
Model MN64GK2D42666
Details
Capacity 64GB (2 x 32GB)
Type 260-Pin DDR4 SO-DIMM
Speed DDR4 2666 (PC4 21300)
CAS Latency CL19
Timing 19-19-19
Voltage 1.20V
ECC No
Buffered/Registered Unbuffered
Multi-channel Kit Dual Channel Kit
Features Experience the benefits of a PC Memory Upgrade with the ability to run more demanding applications simultaneously, and at faster speeds, for a better, smoother, computing experience

High performance DDR4 Laptop Memory designed for PC enthusiasts and gamers

Exceptional performance with a frequency speed of 2666MHz (PC4-21300), and backwards compatible with lower frequencies (2400MHz and 2133MHz)

Timing 19-19-19; CAS Latency of 19, 1.2 Volts
Additional Information
First Listed on Newegg November 23, 2021

Warranty & Returns

Warranty, Returns, And Additional Information

Warranty

  • Limited Warranty period (parts): Lifetime
  • Limited Warranty period (labor): Lifetime
  • Read full details

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