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Main image of SAMSUNG 860 EVO Series M.2 2280 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E1T0BW

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SAMSUNG 860 EVO Series M.2 2280 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E1T0BW

M.2 2280
1TB
SATA III

🔥Don't forget your OS, we have Windows 11 OEM, Download and USB versions available

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Form Factor	M.2 2280
Capacity	1TB
Memory Components	V-NAND 3-bit MLC
Interface	SATA III
Controller	Samsung MJX
Cache	Samsung 1GB Low Power DDR4 SDRAM

Max Sequential Read	Up to 550 MBps
Max Sequential Write	Up to 520 MBps
4KB Random Read	Random (QD1): Up to 10,000 IOPS Random (QD32): Up to 97,000 IOPS
4KB Random Write	Random (QD1): Up to 42,000 IOPS Random (QD32): Up to 88,000 IOPS
Terabytes Written (TBW)	600TB
MTBF	1,500,000 hours

Power Consumption (Active)	Average: 3.0W Maximum: 4.5W (Burst mode)
Operating Temperature	0°C ~ +70°C
Max Shock Resistance	1,500G & 0.5 ms (Half sine)

Height	2.30mm
Width	22.00mm
Depth	80.00mm

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SAMSUNG 860 EVO Series M.2 2280 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E1T0BW

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Brand	SAMSUNG
Series	860 EVO Series
Model	MZ-N6E1T0BW
Device Type	Internal Solid State Drive (SSD)
Used For	Consumer

Item#: 9SIAADFJUX2832

Meet Your Seller

SAMSUNG 860 EVO Series M.2 2280 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E1T0BW

Learn more about the SAMSUNG MZ-N6E1T0BW

Customer Reviews of the SAMSUNG MZ-N6E1T0BW

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