Learn more about the SAMSUNG MZ-N5E1T0BW
ModelBrand | SAMSUNG |
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Series | 850 EVO |
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Model | MZ-N5E1T0BW |
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Device Type | Internal Solid State Drive (SSD) |
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Used For | Consumer |
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DetailsForm Factor | M.2 2280 |
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Capacity | 1TB |
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Memory Components | 3D NAND |
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Interface | SATA III |
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Controller | MGX |
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PerformanceMax Sequential Read | Up to 540 MBps |
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Max Sequential Write | Up to 500 MBps |
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4KB Random Read | Up to 10,000 IOPS (QD1) Up to 97,000 IOPS (QD32) |
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4KB Random Write | Up to 40,000 IOPS (QD1) Up to 89,000 IOPS (QD32) |
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MTBF | 1,500,000 hours |
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EnvironmentalPower Consumption (Idle) | 50mW |
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Power Consumption (Active) | 2.3W/2.7W (Read/Write) |
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Operating Temperature | 0°C ~ +70°C |
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Storage Temperature | -40°C ~ +85°C |
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Operating Humidity | 5% to 95% RH |
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Max Shock Resistance | 1500G |
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Max Vibration Resistance | 20G |
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Dimensions & WeightHeight | 2.30mm |
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Width | 22.00mm |
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Depth | 80.00mm |
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Weight | 40.00g |
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Additional InformationDate First Available | October 25, 2023 |
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Customer Reviews of the SAMSUNG MZ-N5E1T0BW