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Brand | SAMSUNG |
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Series | 9100 PRO |
Model | MZ-VAP8T0B/AM |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
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Capacity | 8TB |
Memory Components | Samsung V NAND TLC (V8) |
Interface | PCI-Express 5.0 x4 |
Protocol | NVMe 2.0 |
Controller | In-House Controller |
Cache | 8GB LPDDR4X Intelligent TurboWrite 2.0: 1928GB |
Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
Max Sequential Read | Up to 14800 MBps |
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Max Sequential Write | Up to 13400 MBps |
4KB Random Read | Up to 2,200,000 IOPS |
4KB Random Write | Up to 2,600,000 IOPS |
Terabytes Written (TBW) | 4800TB |
HeatSink | without HeatSink |
Power Consumption (Idle) | 9.3mW Device Sleep (L1.2) |
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Power Consumption (Active) | 10.5W / 8.8W (Read/Write) |
Height | 3.88mm |
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Width | 22.15mm |
Depth | 80.15mm |
Weight | 9.5g |
First Listed on Newegg | October 16, 2025 |
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