Built with 3D TLC NAND flash and a robust MTBF (Mean Time Between Failures) of 1.5 million hours, the G55 is designed for long-term reliability and endurance. It also includes advanced flash management features like LDPC ECC (Low-Density Parity-Check Error Correction Code) for data integrity.
Key Features:
Capacity: 1TB
Interface: PCIe Gen 5x4 NVMe 2.0
Sequential Read Speed: Up to 10, 200 MB/s
Sequential Write Speed: Up to 8, 300 MB/s
Random Read/Write IOPS: Up to 1, 300K/1, 500K
Form Factor: M. 2 2280
NAND Flash: 3D TLC
Controller: TSMC 7nm Process
Advanced Features: HMB, SLC Caching, TRIM, S. M. A. R. T.
Durability: 600 TBW (Total Terabytes Written)