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Capacity
512GB
Form Factor
M.2 2280
Interface
PCIe Gen4x4
Speed
512GB sequential read up to 7450MB/s, sequential write up to 3500MB/s, random 4K Read/Write up to 500/900K1
Operating Temperature
0oC to 70oC (32oF to 158oF)
Storage Temperature
-40oC to 85oC (-40oF to 185oF)
Shock Resistant
1500G, duration 0.5ms, Half Sine Wave2
Vibration Resistant
10-2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z) 2
TBW
512GB: 500TBW
NAND Flash
3D TLC
MTBF
1,500,000 Hours
1Up to 7500 MB/s read transfer, write transfer speeds lower. Speeds based on internal testing. Actual performance may vary.
2Shock resistant (1500G, duration 0.5ms, Half Sine Wave) and vibration resistant (10-2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z)). Based on internal testing. Actual performance may vary.