Memory

• CAS Latency: CL30
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 30-36-36
• Model #: KF560C30BBEAK2-32

Limited time offer, ends 01/11

• Part Number: KS3200D4N12016G
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: KS3200D4N12016G

(154)

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Buffered/Registered: Unbuffered
• Model #: SU032GXLZU360BDDSN

(154)

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Buffered/Registered: Unbuffered
• Model #: SP032GXLZU360BDAJ5

Limited time offer, ends 01/11

• Part Number: KS4800D5N11016G2
• CAS Latency: CL40
• Timing: 40-40-40
• Multi-channel Kit: Dual Channel Kit
• Model #: KS4800D5N11016G2

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

(154)

• CAS Latency: CL18
• Voltage: 1.35V
• Timing: 18-22-22-42
• Buffered/Registered: Unbuffered
• Model #: SP016GXLZU360BDAJ5

(14)

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SU032GXLWU60AFDGSW

• Model #: 515473247086

(10)

• CAS Latency: CL30
• Voltage: 1.35V
• Timing: 30-38-38-96
• Buffered/Registered: Unbuffered
• Model #: SU032GXLWU60AFDHSW

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Complies with JEDEC standards Low voltage of 1.2V for less power consumption 100% tested for stability, durability, and reliability 100% verified for compatibility on mainstream DDR4 motherboards
• Model #: SU008GBSFU320B02SN

Limited time offer, ends 01/11

• Part Number: KS3200D4M13516Gx2-Red
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• BIOS/Performance Profile: XMP 2.0
• Model #: KS3200D4M13516G2R

(134)

• CAS Latency: CL22
• Voltage: 1.20V
• Timing: 22-22-22
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4DFRA32A

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: AT8G2D5S5600NS16N11V

(154)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-38
• Buffered/Registered: Unbuffered
• Model #: SP016GXLZU320BDAJ5

• Brand: OWC
• Capacity: 16GB
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 2666 (PC4 21300)
• Model #: OWC2C6D42R816GB-C334-SF

• CAS Latency: CL40
• Voltage: 1.10V
• Chipset: Major Brand Chipset
• Recommend Use: AMD & Intel Compatible
• Model #: AT8G1D5D4800NS16N11V

• CAS Latency: CL11
• Voltage: 1.35V
• Recommend Use: AMD & Intel Compatible
• Model #: AT8G2D3S1600ND8N135V

• CAS Latency: CL11
• Voltage: 1.35V
• Chipset: Major OEM Samsung, Micron, Hynix
• Buffered/Registered: Unbuffered
• Model #: MD12800-828K02-499

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Recommend Use: AMD & Intel Compatible
• Model #: NE-SS-0060

• Voltage: 1.50V
• Recommend Use: Select Compatible DDR3 Desktops
• Buffered/Registered: Unbuffered
• Tested Frequency: 1333
• Model #: NE-SS-0011

• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Buffered/Registered: Unbuffered
• Model #: NE-SS-0040

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR3 Orignial Series 204-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 16GB (2 x 8GB)
• Type: 204-Pin DDR3 SO-DIMM
• Model #: MS12800-828LK02-514

• Brand: NEMIX RAM
• Series: NEMIX RAM DDR4 Orignial Series 260-Pin NON-ECC Unbuffered SODIMM Memory
• Capacity: 32GB (2 x 16GB)
• Type: 260-Pin DDR4 SO-DIMM
• Model #: MS19200-628K02-535

• Chipset: Major OEM Samsung, Micron, Hynix
• CAS Latency: CL22
• Voltage: 1.20V
• Part Number: ME25600-628K2
• Model #: ME25600-628K02-G

• CAS Latency: CL32
• Voltage: 1.40V
• Multi-channel Kit: Dual Channel Kit
• Timing: 32-40-40-84
• Model #: VEB532G6432KW

(113)

• CAS Latency: CL40
• Voltage: 1.25V
• Timing: 40-40-40-76
• Recommend Use: Intel 600 Series
• Model #: FLBD516G5200HC40CDC01

• CAS Latency: CL10
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Timing: 10-11-10-30
• Model #: PV316G186C0K