"UCSCNVMEHWH3200-RF"

• Brand: Silicon Power
• Model #: SP032GBSVU480F02

• Brand: Silicon Power
• Model #: SP032GBSVU560F02

• Buffered/Registered: Unbuffered
• Part Number: M425R1GB4PB0-CWM
• Features: M425R1GB4PB0-CWM
• Model #: M425R1GB4PB0-CWM

• Model #: B-SAMSUNG M425R2GA3BB0-CQK

• Brand: Silicon Power
• Model #: SP024GBSVU560P02

Limited time offer, ends 01/11

• Part Number: KS3200D4N12016G
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• Recommend Use: AMD & Intel Compatible
• Model #: KS3200D4N12016G

• CAS Latency: CL3
• Timing: 3-3-3
• Voltage: 2.60V
• Buffered/Registered: Unbuffered
• Model #: KVR400X64SC3A/512

• Model #: 568529242627

• Brand: Yes
• Capacity: 32GB (2 x 16GB)
• Type: 260-Pin DDR4 SO-DIMM
• CAS Latency: CL19
• Model #: OWC2C6D42R8032P-ZAL-SF

• Brand: OWC
• Capacity: 32GB
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: OWC3S2D42R832GB-B614-SF

• Brand: OWC
• Capacity: 32GB
• Type: 262-Pin DDR5 SO-DIMM
• Speed: DDR5 4800 (PC5 38400)
• Model #: OWC4S8D52R832GB-B840-SF

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: M425R1GB4BB0-CWM, M425R1GB4PB0-CWM
• Model #: NE-PNR-2260

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Model #: SU032GBSFU320X22SN

Limited time offer, ends 01/11

• Part Number: KS4800D5N11016G2
• CAS Latency: CL40
• Timing: 40-40-40
• Multi-channel Kit: Dual Channel Kit
• Model #: KS4800D5N11016G2

• CAS Latency: CL40
• Voltage: 1.10V
• ECC: Yes
• Buffered/Registered: Unbuffered
• Model #: NE-PNR-2285

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: M425R2GA3BB0-CWM
• Model #: NE-PNR-2261

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: M425R6GA3BB0-CWM
• Model #: NE-PNR-2284

• CAS Latency: CL22
• Voltage: 1.20V
• ECC: Yes
• Buffered/Registered: Unbuffered
• Model #: NE-PNR-2249

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: MTC16C2085S1SC48B, MTC16C2085S1SC48BA1
• Model #: NE-PNR-2131

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: CT32G48C40S5, CT2K32G48C40S5
• Model #: NE-PNR-1641

(142)

• CAS Latency: CL40
• Timing: 40-39-39
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Model #: CT32G48C40S5

(4)

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Parts: 3 Years
• Model #: M471A1K43DB1-CWE

• Model #: M471A2K43CB1-CRC_UA

• Model #: M471A1K43BB1-CRC_UA

• Model #: 4X71K08908

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: KVR32S22D8/32

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Model #: KVR32S22S8/8

(3)

• Voltage: 1.20V
• Model #: M471A1K43CB1-CRC

(142)

• CAS Latency: CL46
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Part Number: CT2K32G56C46S5
• Model #: CT2K32G56C46S5

• CAS Latency: CL40
• Voltage: 1.10V
• Buffered/Registered: Unbuffered
• Features: Major Brand Chips
• Model #: 5053772483149

• Model #: SNPP6FH5C/32G

(1)

• Voltage: 1.8v
• Multi-channel Kit: Dual Channel Kit
• Model #: M470T5267AZ3-C

• Model #: M470T5663QZ3

• Chipset: Major Brand Chipset
• Voltage: 1.20V
• Type: 260-Pin DDR4 SO-DIMM
• Rank: 2Rx8
• Model #: SNPNNRD4C/32G